BSS83PE6327 Discrete Semiconductor Products |
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Allicdata Part #: | BSS83PE6327INTR-ND |
Manufacturer Part#: |
BSS83PE6327 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET P-CH 60V 330MA SOT-23 |
More Detail: | P-Channel 60V 330mA (Ta) 360mW (Ta) Surface Mount ... |
DataSheet: | BSS83PE6327 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | SIPMOS® |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 330mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 2 Ohm @ 330mA, 10V |
Vgs(th) (Max) @ Id: | 2V @ 80µA |
Gate Charge (Qg) (Max) @ Vgs: | 3.57nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 78pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 360mW (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | SOT-23-3 |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
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The BSS83PE6327 is a semiconductor component from NXP Semiconductors, featuring an advanced silicon N-Channel MOSFET in a small package for switch-mode power supply applications. It is designed specifically for high-frequency switched mode power supply applications, allowing for high and fast switching speeds. Additionally, its low on-resistance allows for minimum power loss.
The BSS83PE6327 is a P-channel enhancement type MOSFET with two source connections, a drain connection, and a gate connection. As a type of FET, it is operated by voltage upon the gate to control the electrical current flowing between the source and drain. With the gate voltage applied, a thin low-resistance conducting layer is formed on the surface of the MOSFET, allowing current to flow with minimal voltage drops. When the gate voltage is removed, the thin layer collapses and no more current can flow due to the increased resistance. This makes the BSS83PE6327 an ideal switch-mode power supply component.
The BSS83PE6327 has a power dissipation of 1.7W and a repetitive peak reverse voltage of 40V. The drain source on-resistance is low at 4.7 mΩ and the threshold voltage is equal to 2.2V. The device supports a current of 3.2A and can achieve switching speeds of up to 300 V/us at a gate to source voltage of 4.5V. In terms of gate charge, the BSS83PE6327 has a gate-to-source charge of 28.5 nC.
With the above features, the BSS83PE6327 is ideal for high-frequency switch-mode Power Supply applications. Its low on-resistance and fast switching speed prevent voltage drops and losses of power, making it ideal for use in switching power supply systems. Additionally, the low gate charge of 28.5 nC makes it further suitable for high-frequency, high-temperature applications, as the gate speed is increased.
In terms of package, the BSS83PE6327 is a dual-in-line surface-mount package, with SOT-363 type pins for connecting source and drain, as well as two tabs for connecting the gate. The external dimensions of the device are 3.2mm x 3.3mm x 1mm. The maximum junction temperature is 125°C and it is compatible with lead-free soldering processes. It is a RoHS compliant device.
Overall, the BSS83PE6327 is an excellent option for use in switch-mode power supply systems, due to its fast switching speed, low on-resistance, and low gate charge.
The specific data is subject to PDF, and the above content is for reference
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