Allicdata Part #: | 1727-1264-2-ND |
Manufacturer Part#: |
BSS84AKMB,315 |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET P-CH 50V 230MA 3DFN |
More Detail: | P-Channel 50V 230mA (Ta) 360mW (Ta), 2.7W (Tc) Sur... |
DataSheet: | BSS84AKMB,315 Datasheet/PDF |
Quantity: | 20000 |
10000 +: | $ 0.05693 |
Vgs(th) (Max) @ Id: | 2.1V @ 250µA |
Package / Case: | 3-XFDFN |
Supplier Device Package: | 3-DFN1006B (0.6x1) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 360mW (Ta), 2.7W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 36pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 0.35nC @ 5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 7.5 Ohm @ 100mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 230mA (Ta) |
Drain to Source Voltage (Vdss): | 50V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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Transistors - FETs, MOSFETs - Single
BSS84AKMB,315 is a type of single N-channel, depletion-mode MOSFET (Metal Oxide Semiconductor Field Effect Transistor) protected with an avalanche-rated drain-source diode. It is commonly found in switching and amplifier applications.The MOSFET is a type of transistor that participates in three-terminal switching and amplifier circuits. It is generally used in circuits where there is a need to control a large amount of current with just a small amount of control current. It is also used as a means of controlling the speed and direction of current flow through a circuit.The primary function of a MOSFET is to amplify a weak signal into a stronger one. To do this, the MOSFET relies on its physical structure, which is made up of four alternating layers of electrically conductive and charge-transfer materials. These layers form an electrical channel connecting the source and drain terminals of the transistor. When a voltage is applied between the source and gate terminals, this channel is modulated to alter its capacitance, thus allowing for the control of the current flowing through the transistor.A particular type of MOSFET, the depletion-mode MOSFET, is typically used in BSS84AKMB,315 applications. This type of transistor is characterized by its ability to both block and pass current without the need for a gate voltage. The drawback of this structure is that it can easily be damaged by potential voltages exceeding the breakdown voltage of the device. To prevent this, the BSS84AKMB,315 is equipped with an avalanche-rated drain-source diode, ensuring that the MOSFET will not be over-stressed and damaged by excessive voltages.The BSS84AKMB,315 is primarily used in switching and amplifier applications. As a switching element, the device allows for the control of current flow in a circuit, making it a popular component in low-voltage, small-signal circuits. Additionally, the device can be used as an amplifier, where the input signals are directly proportional to the gate voltage, indicating a large amplification capability.
In conclusion, the BSS84AKMB,315 is a single N-channel, depletion-mode MOSFET with an avalanche-rated drain-source diode. It is commonly used in switching and amplifier applications, where it provides a large amount of current control with just a small amount of control current. This makes it an ideal component for low-voltage, small-signal circuits, where it can be used as either a switch or amplifier.
The specific data is subject to PDF, and the above content is for reference
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