BUK664R4-55C,118 Discrete Semiconductor Products |
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Allicdata Part #: | 1727-5525-2-ND |
Manufacturer Part#: |
BUK664R4-55C,118 |
Price: | $ 0.58 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 55V 100A D2PAK |
More Detail: | N-Channel 55V 100A (Tc) 204W (Tc) Surface Mount D2... |
DataSheet: | BUK664R4-55C,118 Datasheet/PDF |
Quantity: | 4000 |
800 +: | $ 0.52774 |
Vgs(th) (Max) @ Id: | 2.8V @ 1mA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 204W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 7750pF @ 25V |
Vgs (Max): | ±16V |
Gate Charge (Qg) (Max) @ Vgs: | 124nC @ 10V |
Series: | Automotive, AEC-Q101, TrenchMOS™ |
Rds On (Max) @ Id, Vgs: | 4.9 mOhm @ 25A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 100A (Tc) |
Drain to Source Voltage (Vdss): | 55V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
BUK664R4-55C,118 transistors are transistors that contain semiconductor material between two or more electrodes, and can be used to form a wide variety of logic gates, devices, amplifiers, and other electronic circuits. They are a type of field effect transistor (FET) – specifically a metal–oxide–semiconductor field-effect transistor (MOSFET). They have characteristics that allow them to be used in many applications, including power management and switching, field effect transistors, amplifiers, and power operational amplifiers, among others.The BUK664R4-55C,118 is a single-gate MOSFET with an optimum drain-source breakdown voltage of 55 volts. This device, like other MOSFETs, can be used as a switch or amplifier based on the voltage of the control gate, which is the gate terminal input. This ability to turn on with a low-voltage input, along with the high switching current and fast switching times, makes this type of transistor a good choice for applications where power requirements are high and space is limited, such as power operational amplifiers and digital logic circuits.The operating principle of the BUK664R4-55C,118 is based on the depletion mode principle. This means that when the control gate voltage is at a low level, the source/drain path is depleted of free carriers, and serves to block the conduction channel. As the voltage of the control gate increases, the channel is opened and allows for current flow. The MOSFET then operates as a low resistance channel for a given drain-source voltage, enabling the transistor to be used as a switch or amplifier.The BUK664R4-55C,118 has a wide variety of applications and can be used in logic circuits, analog circuits, power management, high temperature operations, LED displays, as power switches, and even as RF switches. When used in logic circuits, it can act as a non-inverting switch, using the high breakdown voltage of 55 volts to drive the output to a high-level state when necessary. This can allow for fast switching speeds, making it useful in digital logic circuits.In power management applications, this device can provide high current control with low power dissipation, and can handle a wide range of input voltages. It can also be used in high temperature applications, as the O-ring seal prevents moisture and debris from entering the die. When used in LED displays, it can provide a stable output current to the LED. Additionally, it can be used as a power switch and RF switch.The BUK664R4-55C,118 is widely used in a variety of settings, from consumer electronics to industrial robotics, and can be found in a wide range of applications. Its wide range of characteristics make it a versatile device for any type of circuit. Its large breakdown voltage, fast switching speeds, and easy integration into logic circuits make it a great choice for many power management and logic applications.
The specific data is subject to PDF, and the above content is for reference
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