BUK663R5-30C,118 Allicdata Electronics
Allicdata Part #:

1727-5522-2-ND

Manufacturer Part#:

BUK663R5-30C,118

Price: $ 0.37
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: MOSFET N-CH 30V 100A D2PAK
More Detail: N-Channel 30V 100A (Tc) 158W (Tc) Surface Mount D2...
DataSheet: BUK663R5-30C,118 datasheetBUK663R5-30C,118 Datasheet/PDF
Quantity: 1000
4800 +: $ 0.33947
Stock 1000Can Ship Immediately
$ 0.37
Specifications
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 158W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 4707pF @ 25V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
Series: Automotive, AEC-Q101, TrenchMOS™
Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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BUK663R5-30C, 118 Application Field and Working Principle

The BUK663R5-30C is an N-channel MOSFET that operates with a single drain terminal and a source of both current and voltage. It is one of the most widely used and reliable MOSFET devices in the current market. It is widely used in integrated circuits, logic and RF circuit applications.

The BUK663R5-30C is a metal oxide semiconductor field effect transistor (MOSFET). This type of transistor is widely used in electronic applications due to its ability to be easily integrated into integrated circuits. The device is constructed with a source region, a gate terminal, and a drain region. The device can be constructed with a single drain terminal, or with multiple drain regions for increased current capability. The device can also be constructed with a variety of absorptive and reflective gates. Due to the device’s ease of integration, it is used in a variety of locations throughout electronics systems.

In operation, the device is voltage-controlled and current-controlled. Voltage determines how much current can pass through the channel, while the current determines the amount of voltage across the channel. The device is therefore capable of both providing and controlling power through a single channel. As voltage and current change, the device’s characteristics change. This means that the device can be used in a wide range of applications, such as regulating voltage, switching circuits, and providing power.

The BUK663R5-30C is highly robust and reliable. Due to its low on-resistance, it has exceptional regenerative performance. It also exhibits low-level-noise characteristics and has a low gate-source capacitance, reducing gate-source capacitive noise. The device also has a wide channel width, providing a large amount of current for increased performance. In addition, it also has a low thermal resistance, giving it a wide operating temperature range. All these features make the BUK663R5-30C an exceptional device for many applications.

The BUK663R5-30C is particularly suited for use in medium power electronic systems. In addition to being used in RF and logic circuits, it can also be used in high-power applications such as switchmode power supplies, static relays, and motor control circuits. Also, it is well suited for applications that require low-level noise or fast switching speeds. Furthermore, it is one of the most reliable and cost-effective devices available on the market today.

In conclusion, the BUK663R5-30C is an N-channel MOSFET. It is highly reliable, with low power consumption and excellent regenerative performance. It is capable of providing and controlling power through a single channel, and its wide operating temperature range makes it ideal for use in medium power and high power applications. The device is an exceptional choice for a variety of applications, as it is both cost-effective and of the highest quality.

The specific data is subject to PDF, and the above content is for reference

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