BUK6D23-40EX Discrete Semiconductor Products

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BUK6D23-40EX is a N-channel Enhancement Mode Power MOSFET, which is suitable for use in low-frequency power electronic applications, such as DC/DC converters, motor control, and battery protection. The BUK6D23-40EX is an industry-standard package, which is also very cost-effective, making it an ideal choice for many applications.

The BUK6D23-40EX is a vertical MOSFET, which is constructed from several layers of either N-type or P-type silicon. These layers are formed into the desired shape of a MOSFET and the electrical properties are then adjusted to create the required electrical characteristics. The BUK6D23-40EX is a vertical MOSFET, which consists of a Gate, Drain and Source. When the Gate is energized, it changes the conductance between the Drain and Source, allowing current to flow from the Drain to the Source.

The application field of BUK6D23-40EX includes various low-frequency applications, such as DC/DC converters, motor control and battery protection. The MOSFET offers excellent thermal stability and low on-resistance, which makes it suitable for use in these types of applications. The BUK6D23-40EX also offers a reverse avalanche breakdown (RAB) of 40W peak as well as a variety of gate drive functions. This makes it ideal for switch mode applications, where high switching frequencies are required.

The working principle of the BUK6D23-40EX is quite simple. When the gate voltage is applied, the MOSFET becomes conductive, allowing the current to flow from the drain to the source. The gate voltage necessary for the conduction is relatively low and does not usually exceed 10V. The MOSFET provides excellent immunity to thermal runaway due to the low gate charge, which means that its thermal characteristics remain constant over time.

In conclusion, the BUK6D23-40EX is a Cross-sectional MOSFET, which is suitable for use in various low-frequency applications, such as DC/DC converters, motor control and battery protection. The MOSFET provides excellent thermal stability and low on-resistance, which make it ideal for switch mode applications. Also, the BUK6D23-40EX offers a Reverse Avalanche Breakdown (RAB) of 40W peak and a variety of gate drive functions.

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