BUK6D43-60EX Discrete Semiconductor Products |
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Allicdata Part #: | 1727-7411-2-ND |
Manufacturer Part#: |
BUK6D43-60EX |
Price: | $ 0.18 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 60V 5A 6DFN2020MD |
More Detail: | N-Channel 60V 5A (Ta) 15W (Tc) Surface Mount DFN20... |
DataSheet: | BUK6D43-60EX Datasheet/PDF |
Quantity: | 9000 |
3000 +: | $ 0.15758 |
Vgs(th) (Max) @ Id: | 2.7V @ 250µA |
Package / Case: | 6-UDFN Exposed Pad |
Supplier Device Package: | DFN2020MD-6 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 15W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 590pF @ 30V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 18nC @ 10V |
Series: | Automotive, AEC-Q101 |
Rds On (Max) @ Id, Vgs: | 43 mOhm @ 5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 5A (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The BUK6D43-60EX is a type of high-power Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET). This type of transistor is commonly used in applications that require high voltage or high current. The BUK6D43-60EX can be used as a switch, as an amplifier, or as an energy storage device. It is capable of handling up to 600 volts and is capable of providing up to 34 watts of power. As such, it is optimal for powering high-power LED lighting systems, electric motors, and other high-voltage applications.
MOSFETs are transistors which are composed of four regions. The source and drain regions are the two primary terminals and are composed of doped semiconductor materials. The gate region is between the source and drain and is must remain electrically insulated from them. The fourth region is the substrate region which provides some structural support for the transistor. MOSFETs operate by creating a conducting channel between the source and drain, controlled by the gate voltage. As the gate voltage is increased, the conducting channel allows an increased amount of current to flow between the source and drain, thus allowing power control or the ability to switch between on and off functions, depending on application.
The BUK6D43-60EX is a “single” MOSFET, meaning it has only a single gate. This type of transistor is ideal for high-current, high-voltage applications because it has more efficient current handling capabilities. It is also ideal for applications where switching speed and response time are important. Unlike bipolar junction transistors (BJTs), MOSFETs do not suffer from significant power dissipation. This is because MOSFETs can be operated with a low voltage difference between the source and drain, thus allowing more efficient switching operations. The BUK6D43-60EX has a drain-source breakdown voltage rating of 600 V, and an on-resistance rating of 0.001 Ohm, allowing it to handle up to 34 watts of power without significant power losses.
The BUK6D43-60EX is commonly used for power switch applications, as it can handle up to 600 V and 34 W, and has an on-resistance rating of 0.001 Ohm. It is also used in other high-power applications, such as lighting systems, electric motors, and high-voltage semiconductor devices. Additionally, its ability to tolerate faster switching operations make it ideal for controlling loads that require a higher switching speed. In these applications, the BUK6D43-60EX can provide efficient control over power and current, making it an ideal choice for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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