| Allicdata Part #: | 568-9806-5-ND |
| Manufacturer Part#: |
BUK7516-55A,127 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Nexperia USA Inc. |
| Short Description: | MOSFET N-CH 55V 65.7A TO220AB |
| More Detail: | N-Channel 55V 65.7A (Tc) 138W (Tc) Through Hole TO... |
| DataSheet: |  BUK7516-55A,127 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Vgs(th) (Max) @ Id: | 4V @ 1mA |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | TO-220AB |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 138W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2245pF @ 25V |
| Vgs (Max): | ±20V |
| Series: | TrenchMOS™ |
| Rds On (Max) @ Id, Vgs: | 16 mOhm @ 25A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 65.7A (Tc) |
| Drain to Source Voltage (Vdss): | 55V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
Description
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The BUK7516-55A,127 is a single N-channel enhancement-mode vertical DMOS field effect transistor (FET). It is designed for use in a wide range of switching and amplifier applications ranging from commercial equipment to aviation and automotive industry.The transistor has a high maximum drain current (ID max) of 3.3A and a maximum drain-source voltage (VD max) of 55V. It features an on-state resistance (RDS(on)) of 0.0018 Ohms at a maximum drain-source voltage (VD) of 10V and a maximum gate-source voltage (VG) of 8V. Application Field
The BUK7516-55A,127 is suitable for a variety of applications and systems such as relays, switches, load drivers, mobile and consumer electronic products, automotive systems and integrated driver applications. It is used in numerous consumer and industrial applications and is particularly well-suited for automotive and industrial applications due to its low on-resistance and large current capabilities.The BUK7516-55A,127 is also useful in a variety of other applications that require high-current switching and/or low on-resistance such as in power amplifiers and high-power supplies.Working Principle
The BUK7516-55A,127 is an N-channel enhancement-mode vertical MOSFET which operates by forming a conductive channel between the source and the drain within an insulated gate region. When an appropriate voltage is applied to the gate, the channel opens up, allowing current to flow from the source to the drain.When the applied voltage to the gate reaches the threshold voltage, the transistor is turned on, and drain-source current (ID) starts to flow through the channel. With increased voltage applied on the gate, the drain current increases accordingly.The Drain-Source Breakdown Voltage (BVDSS) of the BUK7516-55A,127 is 55V. The Transistor has a maximum drain-source current of 3.3A DC and maximum drain-source voltage of 55V DC.The BUK7516-55A,127 has low on-resistance, high breakdown voltage and maximumy Gates-Source voltage (Vgs) of 8V DC. It is a Low-Noise Transistor Design and works on the principle of enhancement-mode operation.Conclusion
The BUK7516-55A,127 is a single N-channel enhancement-mode vertical DMOS field effect transistor (FET). It is designed for use in a wide range of switching and amplifier applications ranging from commercial equipment to aviation and automotive industry. It has a high maximum drain current (ID max) of 3.3A, a maximum drain-source voltage (VD max) of 55V and an on-state resistance (RDS(on)) of 0.0018 Ohms. It is suitable for a variety of applications and systems such as relays, switches, load drivers, mobile and consumer electronic products, automotive systems and integrated driver applications.
The BUK7516-55A,127 is suitable for a variety of applications and systems such as relays, switches, load drivers, mobile and consumer electronic products, automotive systems and integrated driver applications. It is used in numerous consumer and industrial applications and is particularly well-suited for automotive and industrial applications due to its low on-resistance and large current capabilities.The BUK7516-55A,127 is also useful in a variety of other applications that require high-current switching and/or low on-resistance such as in power amplifiers and high-power supplies.Working Principle
The BUK7516-55A,127 is an N-channel enhancement-mode vertical MOSFET which operates by forming a conductive channel between the source and the drain within an insulated gate region. When an appropriate voltage is applied to the gate, the channel opens up, allowing current to flow from the source to the drain.When the applied voltage to the gate reaches the threshold voltage, the transistor is turned on, and drain-source current (ID) starts to flow through the channel. With increased voltage applied on the gate, the drain current increases accordingly.The Drain-Source Breakdown Voltage (BVDSS) of the BUK7516-55A,127 is 55V. The Transistor has a maximum drain-source current of 3.3A DC and maximum drain-source voltage of 55V DC.The BUK7516-55A,127 has low on-resistance, high breakdown voltage and maximumy Gates-Source voltage (Vgs) of 8V DC. It is a Low-Noise Transistor Design and works on the principle of enhancement-mode operation.Conclusion
The BUK7516-55A,127 is a single N-channel enhancement-mode vertical DMOS field effect transistor (FET). It is designed for use in a wide range of switching and amplifier applications ranging from commercial equipment to aviation and automotive industry. It has a high maximum drain current (ID max) of 3.3A, a maximum drain-source voltage (VD max) of 55V and an on-state resistance (RDS(on)) of 0.0018 Ohms. It is suitable for a variety of applications and systems such as relays, switches, load drivers, mobile and consumer electronic products, automotive systems and integrated driver applications.
The specific data is subject to PDF, and the above content is for reference
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