BUK762R7-30B,118

Vgs(th) (Max) @ Id:	4V @ 1mA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	D2PAK
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	300W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	6212pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	91nC @ 10V
Series:	Automotive, AEC-Q101, TrenchMOS™
Rds On (Max) @ Id, Vgs:	2.7 mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	75A (Tc)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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Introduction

BUK762R7-30B,118 is a type of N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) which can be used in a wide range of applications. It is constructed with a silicon dioxide layer and has a very high Current (ID) capacity of 30A. This allows it to take on a very high voltage for its size and make it an ideal choice for use in high-power equipment. This type of MOSFET also has a low Gate-Source Threshold Voltage (VGS), meaning that it allows easy operation and doesn’t require a high level of power to switch.

Application Fields

BUK762R7-30B,118 can be used in a variety of fields such as consumer electronics, industrial, and medical equipment. In consumer electronics, this type of MOSFET can be used in power amplifiers, power supplies, and switching applications. It can also be used as a switch or transistor in industrial or medical electronics. For example, it can be used to switch AC and DC power sources in industrial equipment such as PLCs (Programmable Logic Controllers). In medical equipment, this type of MOSFET can be used to control the switching of voltage signals or to regulate the current flow.

Advantages of BUK762R7-30B,118

The major advantages of using this type of MOSFET include its high current capacity, low gate source threshold, and easy operation. The high current capacity of this MOSFET allows it to be used in equipment that draws substantial amounts of power. This type of MOSFET also has a low Gate-Source Threshold Voltage (VGS), allowing for easy operation and not requiring too much power to switch. Additionally, because of their high current capacity, these MOSFETs can be used in applications with limited space and still achieve relatively high speeds.

Working Principle

The working principle of BUK762R7-30B,118 is based on the same principles as traditional MOSFETs. When a voltage is applied to the Gate, it causes a current to flow through the MOSFET’s body. This current then drives a conductive channel through the Gate and the Drain. The Drain and Source are then connected, and the current is driven from the Drain to the Source. This process allows for the control of the current flow between the Drain and the Source.

Conclusion

In conclusion, BUK762R7-30B,118 is a type of N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) which can be used in a variety of application fields such as consumer electronics, industrial, and medical equipment. It has a very high Current (ID) capacity of 30A and a very low Gate-Source Threshold Voltage (VGS). With these features, it can be used in high-power equipment and offers easy operation and high speeds. Finally, it works using traditional MOSFET principles which allow it to control current flow between the Drain and the Source.

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