BUK7607-55B,118 Allicdata Electronics

BUK7607-55B,118 Discrete Semiconductor Products

Allicdata Part #:

1727-4701-2-ND

Manufacturer Part#:

BUK7607-55B,118

Price: $ 0.56
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: MOSFET N-CH 55V 75A D2PAK
More Detail: N-Channel 55V 75A (Tc) 203W (Tc) Surface Mount D2P...
DataSheet: BUK7607-55B,118 datasheetBUK7607-55B,118 Datasheet/PDF
Quantity: 1000
800 +: $ 0.50945
Stock 1000Can Ship Immediately
$ 0.56
Specifications
Vgs(th) (Max) @ Id: 4V @ 1mA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 203W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3760pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
Series: Automotive, AEC-Q101, TrenchMOS™
Rds On (Max) @ Id, Vgs: 7.1 mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The BUK7607-55B,118 is a single FET (field effect transistor) that is used in various types of applications. It has a number of features, including low on-resistance, low capacitance, and high blocking voltage, that make it a useful device. This article will discuss the application fields and working principle of the BUK7607-55B,118.

The BUK7607-55B,118 is a high-performance, high-performance, high-speed single FET. It offers a low on-resistance (17 mΩ) and low input capacitance (16 nF), as well as a high blocking voltage (700 V). The low on-resistance makes it ideal for high-frequency and high-power circuits, while the low input capacitance ensures that it is suitable for low-power applications. The high blocking voltage makes it suitable for use in high-voltage circuits.

The BUK7607-55B,118 is typically used in audio amplifiers, RF (radio frequency) amplifiers, and voltage regulator circuits. In audio amplifiers, it is used to reduce the amount of distortion in the output signal. In RF amplifiers, it is used to allow high-frequency signals to pass through without degrading the signal. Finally, in voltage regulator circuits, it is used to maintain a stable output voltage at different input voltages.

The working principle of the BUK7607-55B,118 is based on a field effect transistor structure. FETs are electronic devices that act as switches, allowing or blocking current flow depending on the input voltage. The BUK7607-55B,118 works in the same way, but uses the gate voltage to control the on-resistance. By controlling the gate voltage, the drain current can be changed, allowing for precise control of the output voltage.

The BUK7607-55B,118 is a versatile FET that can be used in a variety of applications. Its low on-resistance, low input capacitance, and high blocking voltage make it an ideal choice for a range of circuits, such as audio amplifiers, RF amplifiers, and voltage regulator circuits. Its working principle is based on the field effect transistor structure, allowing precise control of the drain current.

The specific data is subject to PDF, and the above content is for reference

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