BUK762R6-60E,118 Discrete Semiconductor Products |
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Allicdata Part #: | 1727-1090-2-ND |
Manufacturer Part#: |
BUK762R6-60E,118 |
Price: | $ 0.83 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 60V 120A D2PAK |
More Detail: | N-Channel 60V 120A (Tc) 324W (Tc) Surface Mount D2... |
DataSheet: | BUK762R6-60E,118 Datasheet/PDF |
Quantity: | 1000 |
4800 +: | $ 0.74878 |
Series: | Automotive, AEC-Q101, TrenchMOS™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 120A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 2.6 mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 140nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 10170pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 324W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D2PAK |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The BUK762R6-60E,118 is a single-N-Channel MOSFET transistor. It is a relatively rugged and reliable type of transistor, as well as having a low threshold voltage, making it suitable for a range of applications.
These transistors, when used correctly and correctly applied in the right circuit, can offer a range of useful functionality for applications that require efficient switching, short rise and fall times, and a good electrical noise rejection, making them ideal for modern digital applications.
The general application field for the BUK762R6-60E,118 MOSFET is most commonly found in voltage regulators, power management systems, as well as mobile and consumer electronics where it is used as a power switching device. This transistor is ideal for controlling low power and logic signals, as well as for providing protection against short and open circuit failures in a variety of circuits.
The working principle very simple and makes use of the transistor\'s gate and drain-source terminals. When the voltage applied to the gate is below the transistor\'s threshold voltage, the drain to source channel will remain closed, preventing current from flowing between the two. When the applied voltage is above the threshold voltage, however, the channel opens and current can flow between the drain and source.
The amount of current that can pass through the transistor depends on how much of the applied voltage is above the threshold voltage. The higher the voltage is, the more current can flow. This can be used to advantage in many modern circuits, allowing the user to control current more accurately, and to maintain a more stable voltage output.
In addition to its voltage regulator and switching applications, the BUK762R6-60E,118 MOSFET can also be used for frequency control in RF circuits. By making use of its negative feedback characteristics, it can be used to accurately set and control the target frequency in a circuit. This is useful for a range of modern applications, from radio and television transmissions, to computer networks.
Overall, the BUK762R6-60E,118 is a rugged, durable, and reliable type of single-N-Channel MOSFET. It can be used in a range of applications, both in analog and digital circuits, and can offer reliable switching with low-noise operation, making it an attractive choice for a range of different applications.
The specific data is subject to PDF, and the above content is for reference
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