BUK762R4-60E,118 Discrete Semiconductor Products

Series:	Automotive, AEC-Q101, TrenchMOS™
Packaging:	Tape & Reel (TR)
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	60V
Current - Continuous Drain (Id) @ 25°C:	120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	2.4 mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:	4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:	158nC @ 10V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	11180pF @ 25V
FET Feature:	--
Power Dissipation (Max):	357W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	D2PAK
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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()BUK762R4-60E is a single field effect transistor which belongs to the MOSFETs(metal oxide semiconductor field effect transistors) family. It is designed for applications where low gate threshold voltages, fast switching speeds and low input capacitance are of primary importance. It has an improved VCE(on) rating of 60 volts and an RDS(on) rating of 4.2 ohms, hence the part name. The application field of the BUK762R4-60E is fairly broad due to its characteristics such as low power dissipation and small size. It is widely used in power audio systems, power supply switchings, high speed switching circuits, small battery powered appliances, text displays, and automotive applications. The working principle of the BUK762R4-60E is a little more complex than a standard transistor. It incorporates an insulated gate which is created by an oxide layer between the silicon body of the transistor and the gate conductor. When voltage is applied to the gate the electric field generated causes electrons in the oxide layer to accumulates and form an inversion layer which serves as a channel. This results in an increase of current flowing between the drain and the source regions. This effect is often referred to as triggered or gated – due to the fact that the current between the drain and the source is controlled by the gate in an either on direction or off direction. When the gate is not used the transistor behaves like an open switch, but when a voltage is applied to the gate it behaves like a closed switch and allows the current to pass through. One of the main advantages of using the BUK762R4-60E is that it has very low on-state resistance (RDS(on)) which makes it much more efficient than other MOSFETs. This means that it can handle larger currents with minimal heat generation and also reduces the size of the circuit. Furthermore, the BUK762R4-60E offers improved system reliability due to its fast switching speeds and low power dissipation. In conclusion, the BUK762R4-60E is a versatile single field-effect transistor which can be used in a wide variety of applications due to its low gate threshold voltages, fast switching speeds and low input capacitance. The device has very low on-state resistance which makes it more efficient and reliable than other MOSFETs. The device is also more compact which makes it suitable for use in small, battery powered applications.

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