Allicdata Part #: | 1727-7239-ND |
Manufacturer Part#: |
BUK758R3-40E,127 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 40V 75A TO220AB |
More Detail: | N-Channel 40V 75A (Tc) 96W (Tc) Through Hole TO-22... |
DataSheet: | BUK758R3-40E,127 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | Automotive, AEC-Q101, TrenchMOS™ |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 40V |
Current - Continuous Drain (Id) @ 25°C: | 75A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 7.4 mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 24nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1730pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 96W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220AB |
Package / Case: | TO-220-3 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
FET (field effect transistor) is one of the widely used transistor devices, with BUK758R3-40E,127 as a representative. With the development of modern technology, FET devices have been widely used in industries as well as in everyday life, covering a wide range of applications and working principles.
The application field of BUK758R3-40E,127 is mainly in low voltage systems and circuit protection. It is suitable for the protection of low voltage DC, AC input circuits and motor in power supply of air conditioners, washing machines and audio system, with precision control and fast response. Typical applications of this device include DC/DC converter, and motor control.
The working principle of BUK758R3-40E,127 is based on the basic operating principle of FETs. FET is a three-terminal device. When a voltage is applied between the gate electrode and the source electrode, the electric field will be generated which affects the current between the drain and source electrodes. This current, in turn, is used to control the current coming out of the source.
The characteristics of BUK758R3-40E,127 includes strong driving strength, high speed, low power dissipation, high input impedance and low output impedance. The FET device has excellent switching characteristics and good heat dissipation. Additionally, it has a wide operating temperature range, which makes it suitable for a variety of applications. The device also has fast switching speed and high reliability, which make it suitable for long-term use.
To sum up, BUK758R3-40E,127 is an ideal transistor device for low voltage system and circuit protection. It is characterized by its strong driving strength, wide operating temperature range, fast switching speed, low power dissipation and high reliability. Thus, BUK758R3-40E,127 can be used in a variety of applications, making it a popular choice for many industries.
The specific data is subject to PDF, and the above content is for reference
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