BUK7626-100B,118 Allicdata Electronics
Allicdata Part #:

1727-4705-2-ND

Manufacturer Part#:

BUK7626-100B,118

Price: $ 0.41
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: MOSFET N-CH 100V 49A D2PAK
More Detail: N-Channel 100V 49A (Tc) 157W (Tc) Surface Mount D2...
DataSheet: BUK7626-100B,118 datasheetBUK7626-100B,118 Datasheet/PDF
Quantity: 4000
800 +: $ 0.37680
Stock 4000Can Ship Immediately
$ 0.41
Specifications
Vgs(th) (Max) @ Id: 4V @ 1mA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 157W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2891pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Series: Automotive, AEC-Q101, TrenchMOS™
Rds On (Max) @ Id, Vgs: 26 mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The BUK7626-100B,118 is a single power MOSFET transistor. It is an incredibly powerful transistor with a drain-source breakdown voltage of 100V, an on-state resistance of 0.028 Ohm, a gate threshold voltage of 4V and an avalanche voltage of 25V. This component is ideal for use in power switching in various applications.

Its application field is enormously wide-ranging. It is used in switching, dual pre-driver, power regulation, single stage, high frequency power amplifier and in many automotive components, such as the headlamp dimmer, the fuel pump control, engine control and gauges, to name but a few. It is also suitable for use in various different applications, in areas such as industrial, floor care, exercise machines and medical equipment.

The working principle of the BUK7626-100B,118 is based on the conventional MOSFET technology. It is based on metal oxide semiconductor (MOS) field-effect transistor technology, which involves a non-conducting channel that can be used to control current flow. When a voltage is applied to the gate electrode, it produces an electric field which modulates the conductivity of the channel by reducing it, thus allowing the current to flow more freely.

In operation, the BUK7626-100B,118 can be used to control power switching with the gate being connected to a voltage source and the source and drain connected to the load circuit. When the gate voltage is higher than the threshold voltage, the MOSFET is said to be "on", and current flows freely between the source and drain terminals, thus enabling power switching.

The benefit of the MOSFET is its incredibly low on-state resistance, which is far lower than other types of transistors. This means power can be supplied to the load efficiently while dissipating very little power itself. The BUK7626-100B,118 is also designed to have a high power handling capability, making it suitable for use in greater loads.

Additionally, the BUK7626-100B,118 has very good thermal stability and can handle higher temperatures without compromising performance. It also features low gate charge, which allows for faster switching times and more efficient power control.

In conclusion, the BUK7626-100B,118 is an excellent device for use in power switching applications. Its wide range of applications, low on-state resistance and high power handling capabilities make it an ideal choice for use in many different systems, from industrial and automotive components to floor care and medical equipment.

The specific data is subject to PDF, and the above content is for reference

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