BUK7M12-60EX Allicdata Electronics
Allicdata Part #:

1727-7312-2-ND

Manufacturer Part#:

BUK7M12-60EX

Price: $ 0.22
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: MOSFET N-CH 60V 53A LFPAK33
More Detail: N-Channel 60V 53A (Tc) 75W (Tc) Surface Mount LFPA...
DataSheet: BUK7M12-60EX datasheetBUK7M12-60EX Datasheet/PDF
Quantity: 1000
1500 +: $ 0.19938
Stock 1000Can Ship Immediately
$ 0.22
Specifications
Vgs(th) (Max) @ Id: 4V @ 1mA
Package / Case: SOT-1210, 8-LFPAK33
Supplier Device Package: LFPAK33
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 75W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1625pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 24.8nC @ 10V
Series: Automotive, AEC-Q101
Rds On (Max) @ Id, Vgs: 12 mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The BUK7M12-60EX is a modern semiconductor device that has multiple different uses, ranging from a switch to many other application areas. To better understand the capabilities of this device it is beneficial to understand the application fields and working principles of the BUK7M12-60EX. By having a better understanding of this device, it can become clearer how it performs under various different circumstances.

The BUK7M12-60EX falls into the category of transistors, FETs, and more specifically single MOSFETs. This device is a metal-oxide-semiconductor field-effect transistor (MOSFET). This type of transistor is built using insulated-gate technology and used as a switch. By using this transistor, power can be controlled to whatever degree is desired without depleting the power source. This offers more flexibility to electronics than other types of transistors such as bipolar junction transistors (BJTs).

The application field for the BUK7M12-60EX is primarily for use in switching power supplies. This transistor can switch loads of up to 60 Amps and requires a gate current if 10mA or less which makes it an ideal choice for switching power supplies. It is also suitable for use in batteries, heaters, and many other power devices. It is also very versatile and can be used as an amplifier, in logic devices, and for many other functions in addition to switching power supplies.

The working principle of the BUK7M12-60EX is fairly straightforward. It is built of a metal-oxide-semiconductor structure and has two terminals, the gate and the drain. The gate voltage controls the flow of current between the drain and the source. When a voltage is applied to the gate, it attracts electrons and creates an electric field, which allows current to flow through the semiconductor material. The higher the gate voltage, the more current can flow. Conversely, if the gate voltage is lowered, the amount of current that is able to flow through the device is less. This transistor is able to switch loads of up to 60 Amps with a gate current of 10mA or less, making it an ideal switch for high power applications.

Having the knowledge of the application fields and working principles of the BUK7M12-60EX enables engineers to better assess the possibilities it offers in their particular application. Whether you are looking for a switch in a power device or amplifying a signal, this transistor can provide the desired functionality. It has a wide range of uses and can allow engineers to explore new possibilities within their respective fields.

The specific data is subject to PDF, and the above content is for reference

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