BUK7Y15-60EX

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The BUK7Y15-60EX is a type of single N-channel Enhancement Mode Field Effect Transistor (FET). These devices are typically used in signal-switching applications, and can be found in a variety of computer and networking equipment. It is a silicon epitaxial device with an internal gate layer, which makes it suitable for high-frequency applications. This device is specifically designed for power switching, so it is an ideal choice for low-power applications such as AC/DC converters, motor controllers, and servo-motor systems.

The BUK7Y15-60EX is a high-performance N-channel Enhancement Mode FET that offers excellent performance and reliability in both high-side and low-side applications. It has an extended drain-source breakdown voltage of 60V, making it suitable for use in power switching applications. The maximum drain current it can handle up to 15A, and the maximum drain-source on-state resistance is 2.2 Ohms. This device also has built-in overvoltage, overtemperature, and over-current protection, making it suitable for use in a variety of applications.

The working principle behind this device is relatively simple. When a negative voltage is applied to the gate terminal, the voltage at the source terminal is reduced (or held at a certain level). This reduces or eliminates the current flow through the channel. When the voltage on the gate is increased, current begins to flow and the resistance of the channel increases. When the voltage on the gate is increased enough, the channel resistance reaches its peak and the channel closes. The channel resistance then decreases until the transistor is completely turned off.

The BUK7Y15-60EX is most commonly used in applications where fast switching is necessary and where low power consumption is desired. It is designed to be used in automotive applications, voltage regulators, AC/DC converters, lighting dimmers, and motor controllers. Its high-speed switching characteristics also make it an ideal choice for data transmission and storage applications. Its low-resistance drain-source path and built-in protection features make it highly reliable for use in demanding applications.

This device is also available in a surface mount version, which provides improved system performance and higher efficiency. This version allows for the device to be mounted on a printed circuit board, which provides more area for heat sinking and reduces the size of the overall system. This reduces power consumption and improves reliability.

In conclusion, the BUK7Y15-60EX is a high-performance N-channel Enhancement Mode FET that offers excellent performance and reliability. It is suitable for use in a variety of applications, including power switching and data transmission. Its low on-state resistance and built-in protection features make it a reliable and efficient device for use in demanding applications. Its surface-mount version further increases its utility by allowing it to be used in smaller systems.

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