BUK7880-55/CUF

Vgs(th) (Max) @ Id:	4V @ 1mA
Package / Case:	TO-261-4, TO-261AA
Supplier Device Package:	SOT-223
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	8.3W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	500pF @ 25V
Vgs (Max):	±16V
Series:	--
Rds On (Max) @ Id, Vgs:	80 mOhm @ 5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	3.5A (Ta)
Drain to Source Voltage (Vdss):	55V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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BUK7880-55/CUF is a depletion-mode field effect transistor (FET) designed for power supply and electrical motor drive applications. It is packed in a long, mounting-friendly TO-247 package and offers superior switching performance thanks to its low on-resistance Rds(on) and low gate charge Qg with increased gate-charge transient performance. It is suitable for use in high-frequency switching, hard-switching and ZVS applications, as well as rectifiers, solar and motor drives.The BUK7880-55/CUF is a four-pin package with a floating source (pin 3) and a normally low gate voltage (Vgs). The package is constructed using insulated metal oxide semiconductor field-effect transistor technology. The insulation layer between the source and gate terminals ensures a reliable gate voltage control, allowing the FET to remain in the off state even when gate current flows. It also helps reduce gate capacitance and gate charge to achieve a superior on-resistance and static gate charge.Because the BUK7880-55/CUF is a lateral MOSFET, designed with an electrical breakdown voltage (Vbreakdown) of over 200V, it is suitable for applications that require a high breakdown voltage. It is also effective for applications with a wide variety of frequency and voltage ranges. The device is well suited for use in switching inverters or DC-DC converters for mains power supplies, high power audio amplifiers, industrial motor drives, and switchmode power supply stage.The BUK7880-55/CUF MOSFET operates by means of an insulated gate between its source and drain, which can be turned on or off due to the dynamic electric field between its gate and source. When the gate voltage exceeds the device’s threshold voltage, a current can be passed through the device due to the onset of inversion layer formation, allowing the application of power to the load. When the gate voltage drops below the threshold voltage, the inversion layer disappears and the device switches off. The BUK7880-55/CUF is designed with a very low gate threshold voltage and can therefore be switched on and off at a much lower voltage than traditional MOSFETs.The device’s low conduction losses are achieved thanks to its low Rds(on) and high current handling capabilities. In addition, the BUK7880-55/CUF has good thermal stability and can sustain large transient gate and drain currents for better performance. The device’s superior performance is further increased thanks to its highly reliable ON/OFF feature and low gate charge, which makes it suitable for high frequency and hard switching applications.For applications that require superior switching performance and low conduction losses, the BUK7880-55/CUF MOSFET provides reliable and performance-enhancing benefits. Its low gate charge, low input capacitance, and high breakdown voltage make it suitable for a range of power supply, switching and mains voltage applications. The device is also compatible with a wide range of environmental conditions, making it a cost-effective and reliable option.

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