BUK7526-100B,127 Allicdata Electronics
Allicdata Part #:

568-5720-5-ND

Manufacturer Part#:

BUK7526-100B,127

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: MOSFET N-CH 100V 49A TO220AB
More Detail: N-Channel 100V 49A (Tc) 157W (Tc) Through Hole TO-...
DataSheet: BUK7526-100B,127 datasheetBUK7526-100B,127 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 1mA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 157W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2891pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Series: TrenchMOS™
Rds On (Max) @ Id, Vgs: 26 mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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BUK7526-100B is a FET (field effect transistor). FETs are transistors used as electronic switches, amplifiers, and sometimes for signal modulation. FETs are particularly useful for controlling low-frequency signals because of their simplicity and low noise compared to other active devices. In addition, FETs are ideal in applications that require high impendence, high isolation, and high input impedance.

BUK7526-100B is a MOSFET (metal-oxide-semiconductor field effect transistor). MOSFETs are transistors used as electronic switches and amplifiers and have become increasingly popular as they offer better performance than BJTs (bipolar junction transistors) in a range of switching applications. MOSFETs are used in applications requiring high-frequency switching and high-speed switching, as well as applications that require a low noise level and low quiescent power.

BUK7526-100B is a Single FET. Single FETs are transistors with a single gate, source and drain terminal. Single FETs can be used as switches or amplifiers; they\'re ideal for applications that require low-noise operation and low power consumption. Single FETs are also useful for controlling low-frequency signals, as well as for creating high-impedance signal paths.

The application field of BUK7526-100B is mainly in the areas of low-frequency signal control and low-noise signal switching. As with all FETs, BUK7526-100B has low input offset voltage, low input capacitance, low gate threshold voltage, and high breakdown voltage. It is also extremely reliable, due to its very low gate leakage current. In addition, it has a wide temperature range, making it suitable for use in a wide range of temperatures.

The working principle of BUK7526-100B is that it is a MOSFET with a single gate, source and channel connection. The FET controls the current flow between source and drain by modulating the voltage applied to the gate. If the voltage is higher than the threshold voltage, the transistor is "on" and current flows between the source and drain; if it is lower than the threshold voltage, the transistor is "off" and no current flows. Depending on the application, different configurations of FETs can be used to achieve different levels of current flow.

BUK7526-100B is a very useful and reliable FET for low-frequency signal control and low-noise signal switching applications. Its high breakdown voltage, low leakage current, and wide temperature range makes it an ideal choice for applications that require a long life span and consistent performance over a wide temperature range.

The specific data is subject to PDF, and the above content is for reference

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