BUK7Y10-30B,115 Allicdata Electronics
Allicdata Part #:

1727-4602-2-ND

Manufacturer Part#:

BUK7Y10-30B,115

Price: $ 0.25
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: MOSFET N-CH 30V 67A LFPAK
More Detail: N-Channel 30V 67A (Tc) 85W (Tc) Surface Mount LFPA...
DataSheet: BUK7Y10-30B,115 datasheetBUK7Y10-30B,115 Datasheet/PDF
Quantity: 1000
1500 +: $ 0.22222
Stock 1000Can Ship Immediately
$ 0.25
Specifications
Vgs(th) (Max) @ Id: 4V @ 1mA
Package / Case: SC-100, SOT-669, 4-LFPAK
Supplier Device Package: LFPAK56, Power-SO8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 85W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1183pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 18.8nC @ 10V
Series: Automotive, AEC-Q101, TrenchMOS™
Rds On (Max) @ Id, Vgs: 10 mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

BUK7Y10-30B,115 is a type of single power MOSFET (Metal-Oxide Semiconductor Field-Effect Transisor) that is quite popular in the industry. It is a powerful device which is mainly used where high switching speed and efficiency are needed. This MOSFET has very good electrical characteristics and is an ideal choice for power switching applications.

BUK7Y10-30B,115 is mainly used for many fields. For example, it is often used in switching power supplies and in industrial motor drives for efficient and high-speed electricity delivery. Additionally, it is widely used in home appliances, such as televisions, air conditioners and washing machines, as the ideal transistor for motor control. BUK7Y10-30B,115 can also be used in power switching circuits due to its low losses, fast switching speed and low sensitivity to noise.

The working principle of BUK7Y10-30B,115 MOSFET is relatively simple. It is built on a well-balanced structure where a metal oxide semiconductor layer acts as an insulator between the source and drain contacts. This MOSFET is controlled by an electric charge on the gate contact, which results in reverse biasing of the source-drain junction. This junction helps to control the current flowing through the MOSFET by modulating electron velocity.

Meantime, BUK7Y10-30B,115 also has excellent electrical characteristics. Its power dissipation is low compared to other devices, as well as its capacitance, output resistance and leakage current. This makes it an excellent choice for a wide range of applications where small power consumption and excellent noise performance are important. BUK7Y10-30B,115 is also suitable for high-frequency switching applications since its maximum operating frequency is 8.5 GHz.

In short, BUK7Y10-30B,115 is an ideal choice for high-speed and effective power control. Its robust structure and excellent electrical characteristics make it suitable for all kinds of home appliances, switching power supplies and industrial motor drives. It has a very simple working principle and is capable of withstanding high-frequency switching, making it one of the most reliable and efficient power transistors on the market.

The specific data is subject to PDF, and the above content is for reference

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