| Allicdata Part #: | 1727-4602-2-ND |
| Manufacturer Part#: |
BUK7Y10-30B,115 |
| Price: | $ 0.25 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Nexperia USA Inc. |
| Short Description: | MOSFET N-CH 30V 67A LFPAK |
| More Detail: | N-Channel 30V 67A (Tc) 85W (Tc) Surface Mount LFPA... |
| DataSheet: | BUK7Y10-30B,115 Datasheet/PDF |
| Quantity: | 1000 |
| 1500 +: | $ 0.22222 |
| Vgs(th) (Max) @ Id: | 4V @ 1mA |
| Package / Case: | SC-100, SOT-669, 4-LFPAK |
| Supplier Device Package: | LFPAK56, Power-SO8 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 85W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1183pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 18.8nC @ 10V |
| Series: | Automotive, AEC-Q101, TrenchMOS™ |
| Rds On (Max) @ Id, Vgs: | 10 mOhm @ 25A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 67A (Tc) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
BUK7Y10-30B,115 is a type of single power MOSFET (Metal-Oxide Semiconductor Field-Effect Transisor) that is quite popular in the industry. It is a powerful device which is mainly used where high switching speed and efficiency are needed. This MOSFET has very good electrical characteristics and is an ideal choice for power switching applications.
BUK7Y10-30B,115 is mainly used for many fields. For example, it is often used in switching power supplies and in industrial motor drives for efficient and high-speed electricity delivery. Additionally, it is widely used in home appliances, such as televisions, air conditioners and washing machines, as the ideal transistor for motor control. BUK7Y10-30B,115 can also be used in power switching circuits due to its low losses, fast switching speed and low sensitivity to noise.
The working principle of BUK7Y10-30B,115 MOSFET is relatively simple. It is built on a well-balanced structure where a metal oxide semiconductor layer acts as an insulator between the source and drain contacts. This MOSFET is controlled by an electric charge on the gate contact, which results in reverse biasing of the source-drain junction. This junction helps to control the current flowing through the MOSFET by modulating electron velocity.
Meantime, BUK7Y10-30B,115 also has excellent electrical characteristics. Its power dissipation is low compared to other devices, as well as its capacitance, output resistance and leakage current. This makes it an excellent choice for a wide range of applications where small power consumption and excellent noise performance are important. BUK7Y10-30B,115 is also suitable for high-frequency switching applications since its maximum operating frequency is 8.5 GHz.
In short, BUK7Y10-30B,115 is an ideal choice for high-speed and effective power control. Its robust structure and excellent electrical characteristics make it suitable for all kinds of home appliances, switching power supplies and industrial motor drives. It has a very simple working principle and is capable of withstanding high-frequency switching, making it one of the most reliable and efficient power transistors on the market.
The specific data is subject to PDF, and the above content is for reference
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BUK7Y10-30B,115 Datasheet/PDF