BUK7Y25-40B,115 Discrete Semiconductor Products

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FETs (Field Effect Transistors) are solid-state devices that act as electrical switches. Transistor FETs and MOSFETs (Metal Oxide Semiconductor FETs) are two important types of Field Effect Transistors. The BUK7Y25-40B, 115 is a N-channel MOSFET (Metal–Oxide–Semiconductor Field-Effect Transistor) that has been designed primarily for use in power amplifier circuits, such as Class-D audio amplifiers, and low-frequency switching applications. This device is ideal for operation in high-speed switching circuits that require low gate charge and high-speed switching performance.

The BUK7Y25-40B, 115’s electrical characteristics are typified by; its low on-state resistance (Rdson) of 0.0085 Ω, a Continuous Drain-source Voltage (VDSS) of 40V, a maximum Drain Current (ID) of 9.7A, and a Power Dissipation (PD) of 5.1W. The gate oxide thickness is 1.8nm. The device is designed with a planar structure and uses a double diffused magnesium incorporated into the le vels for improved breakdown and stability.

The overall electrical and thermal characteristics of this device make it ideally, suited for high-speed switching applications such as in motor and solenoid controls, digital signal processing, and in power control circuits. The device is also suitable for use in audio power accessories like; power amplifiers, power switches, line drivers and transducers.

The main functionality and working principle of the BUK7Y25-40B, 115 N-channel MOSFET is based on the behavior of the gate voltage and the output current. When the gate voltage is zero, there is no current flowing through the drain and source. As the gate voltage is increased, it induces a channel between the drain and source, enabling current to flow between the drain and source. As the gate voltage is further increased, the MOSFET reaches saturation, and the drain current rises rapidly. When the gate voltage is taken below the threshold voltage, the channel is turned off and the current shuts off.

In summary, the BUK7Y25-40B, 115 N-channel MOSFET is a high performing device that is suitable for various applications such as audio power devices, power switch, line drivers, transducers, motor and solenoid control, and digital signal processing. The device offers improved electrical and thermal characteristics, as well as a low on-state resistance, while still maintaining high-speed switching capabilities. The main working principle is based on the behavior of the gate voltage and the output current, and enables current to flow between the drain and source in Direct Current (DC) applications.

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