Allicdata Part #: | 568-6637-5-ND |
Manufacturer Part#: |
BUK9E04-30B,127 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | MOSFET N-CH 30V 75A I2PAK |
More Detail: | N-Channel 30V 75A (Tc) 254W (Tc) Through Hole I2PA... |
DataSheet: | BUK9E04-30B,127 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2V @ 1mA |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Supplier Device Package: | I2PAK |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 254W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 6526pF @ 25V |
Vgs (Max): | ±15V |
Gate Charge (Qg) (Max) @ Vgs: | 56nC @ 5V |
Series: | TrenchMOS™ |
Rds On (Max) @ Id, Vgs: | 3 mOhm @ 25A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 75A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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BUK9E04-30B,127 Application Field and Working Principle
The BUK9E04-30B,127 is a type of field effect transistor (FET) known as a Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET). A FET is a type of transistor that includes 4 terminals and forms a controlled electronic switch. Also sometimes referred to as an insulated gate bipolar transistor (IGBT), the BUK9E04-30B,127 MOSFET has 3 distinct areas: the drain, the source, and the gate. In the BUK9E04-30B,127 MOSFET, the drain and the source are separated by a metal oxide layer, forming a barrier between them. The gate is insulated from the metal oxide layer and can be controlled by an electronic voltage.
The BUK9E04-30B,127 MOSFET is used in a variety of applications. It can be used in power switching, high speed analog, and low voltage drive circuits. Additionally, it can be used in electrostatic discharge (ESD) protection and motor speed control. Due to its metal oxide layer, it is also suitable for use in high temperature environments.
The BUK9E04-30B,127 MOSFET works on the principle of having its drain and source connected through a thin oxide layer. When an electronic voltage is applied to the gate, a small electrical field is created across the oxide layer. This electric field is capable of allowing conduction of current in one direction only, while blocking current on the opposite direction. Thus, the BUK9E04-30B,127 MOSFET can be switched ON and OFF to control the flow of current in a circuit.
The BUK9E04-30B,127 MOSFET is designed to be used in power supply design, audio, and optical circuits and noise reduction switches. Its main feature is its low "ON resistance" value, and its ability to be used in high temperature and high current applications. Additionally, it is highly reliable and can be used in applications requiring long life and frequent switching.
To conclude, the BUK9E04-30B,127 is a type of MOSFET which is used in a variety of applications. It is capable of controlling current flow in one direction only, while blocking current in the opposite direction. Its unique features include a low “ON resistance” value, and its ability to be used in high temperature and high current applications. As such, it is suitable for use in a variety of applications including power supply design, audio and optical circuits, noise reduction switches, and motor speed control.
The specific data is subject to PDF, and the above content is for reference
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