Allicdata Part #: | 1727-2224-2-ND |
Manufacturer Part#: |
BUK98150-55A/CUF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 55V 5.5A SOT223 |
More Detail: | N-Channel 55V 5.5A (Tc) 8W (Tc) Surface Mount SOT-... |
DataSheet: | BUK98150-55A/CUF Datasheet/PDF |
Quantity: | 56000 |
Vgs(th) (Max) @ Id: | 2V @ 1mA |
Package / Case: | TO-261-4, TO-261AA |
Supplier Device Package: | SOT-223 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 8W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 320pF @ 25V |
Vgs (Max): | ±15V |
Gate Charge (Qg) (Max) @ Vgs: | 5.3nC @ 5V |
Series: | TrenchMOS™ |
Rds On (Max) @ Id, Vgs: | 137 mOhm @ 5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 5.5A (Tc) |
Drain to Source Voltage (Vdss): | 55V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The BUK98150-55A/CUF is a single N-channel enhancement-mode field effect transistor (MOSFET). It was specifically designed to provide superior performance in high-speed switching applications.
The BUK98150-55A/CUF is a monolithic integrated circuit with a built-in gate oxide and a built-in charge pump, which ensures an extremely low “on” resistance. The device has a breakdown voltage of up to 55V and a maximum drain-source voltage of up to 100V. It features an excellent power dissipation capabilities and can be used in high temperatures environment.
The BUK98150-55A/CUF offers superior switching characteristics with fast switching times, low input capacitance and a wide operating temperature range to ensure reliable operation. It also offers very low operating current, excellent on-resistance and superior ESD protection. All these features make the BUK98150-55A/CUF an ideal choice for high-speed switching applications.
The main application field of the BUK98150-55A/CUF is in power management, motor control, switching regulator, automotive applications and UPS system. The device can also be used in various communication systems such when combined with power amplifiers and analog switches.
The BUK98150-55A/CUF is an n-channel enhancement-mode power MOSFET which employs a low gate voltage (VGS ≤ 4V) to ensure that the device remains in its cut-off mode during the “off” period. It has a temperature coefficient of just 65mV/°C, which ensures a constant gate voltage even at high temperatures. The device also offers excellent output capacitance and fast switching times.
The working principle of the BUK98150-55A/CUF is based on the principle of electric field. When the voltage applied to the gate of the MOSFET is increased, the current flowing through the drain terminal is increased and the MOSFET switches between the “on” and “off” states. The device can be operated in both the linear and saturation mode by changing the voltage applied to the gate.
The BUK98150-55A/CUF features a low gate-drain capacitance of just 6.3pF, which ensures low switching losses. It also has low gate charge, which makes sure that the device does not require much power to switch between its “on” and “off” states. Its excellent ESD protection protects the device from the damaging electric shocks and it is also resistant to EMI/RFI disturbance.
The BUK98150-55A/CUF is an ideal choice for applications which require reliability and high performance with excellent power efficiency. Its robust design, low power consumption and fast switching times makes it a great choice for a wide range of applications. It is suitable for both industrial and consumer applications and offers exceptional value for money.
The specific data is subject to PDF, and the above content is for reference
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