CSD17556Q5B

Gate Charge (Qg) (Max) @ Vgs:	39nC @ 4.5V
Base Part Number:	CSD17556Q5B
Package / Case:	8-PowerTDFN
Supplier Device Package:	8-VSON-CLIP (5x6)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	3.1W (Ta), 191W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	7020pF @ 15V
Vgs (Max):	±20V
Series:	NexFET™
Vgs(th) (Max) @ Id:	1.65V @ 250µA
Rds On (Max) @ Id, Vgs:	1.4 mOhm @ 40A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	34A (Ta), 100A (Tc)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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The CSD17556Q5B is a vertical double-diffused metal–oxide–semiconductor field-effect transistor (DMOSFET) which is typically used as a power switch in a wide range of applications. As a replacement for traditional discrete transistors and relays, it offers better performance, lower operating power and more flexibility.Application fieldThe CSD17556Q5B is designed to replace discrete power MOSFET transistors in a wide range of applications. It can be used in power circuitry for DC-DC converters and DC-AC inverters, for DC electric drives for industrial motors, for AC electric drives for compressors, for electric tool motors, for switch mode power supplies, for power factor correction and for lighting systems. It is also suitable for a variety of other applications including HVAC, automotive, home appliance and consumer electronics.Working principleA DMOSFET is a single transistor device in which an N-channel MOSFET (Metal–Oxide–Semiconductor FET) is formed in the vertical space between two N-doped regions of a P-type substrate. The transistor is normally used to switch a large amount of power.When the gate voltage of the CSD17556Q5B is taken to a level higher than the threshold voltage of the device, a channel is formed underneath the gate oxide, allowing current to flow. This is known as the inversion layer. As more positive gate voltage is applied, the inversion layer extends further into the semiconductor, resulting in higher current flow. The maximum current that can be drawn is then limited only by the external resistance.The CSD17556Q5B also has a parasitic body diode, which is formed when the source of a FET is shorted to the drain. This enables the MOSFET to act as a bidirectional switch, allowing current to flow in either direction when the device is turned on.ConclusionThe CSD17556Q5B is a vertical double-diffused metal–oxide–semiconductor field-effect transistor (DMOSFET) which is typically used as a power switch in a wide range of applications. It is used in power circuitry for DC-DC converters and DC-AC inverters, for DC electric drives for industrial motors, for AC electric drives for compressors, for electric tool motors, for switch mode power supplies, for power factor correction and for lighting systems. It offers better performance, lower operating power and more flexibility than traditional discrete transistors and relays.

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