CSD17556Q5BT

Vgs(th) (Max) @ Id:	1.65V @ 250µA
Package / Case:	8-PowerTDFN
Supplier Device Package:	8-VSON-CLIP (5x6)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	3.1W (Ta), 191W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	7020pF @ 15V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	39nC @ 4.5V
Series:	NexFET™
Rds On (Max) @ Id, Vgs:	1.4 mOhm @ 40A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	100A (Ta)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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CSD17556Q5BT is a single N-Channel silicon gate MOSFET. It is widely used in high-frequency and high-voltage environments due to its excellent electrical characteristics. This MOSFET can handle up to 500 volts, making it a reliable choice for power supply designs. It is specifically designed to be used in applications such as automotive, communication, industrial, and computer systems.The CSD17556Q5BT is designed as a device with specific high-speed characteristics as well as low RDS-ON losses. The device also has low Capacitance-Voltage (CV) characteristics and a low input capacitance. The low on resistance makes it an ideal choice for high frequency switching applications.The CSD17556Q5BT is an ideal device for switching applications. It incorporates the latest technology to provide low on state resistance and high breakdown voltage. The low capacitance voltage allows it to operate with high frequency signals and low noise levels.The working principle of the CSD17556Q5BT is based on the P-Channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET). The device works in the same way as normal P-FETs but it offers the added benefit of having a gate to control the electrical characteristics of the device. When the gate voltage is at 0V the source and drain are off and there is no current flow. Once the gate voltage is increased the threshold voltage is reached and the current starts to flow. The amount of current that flows is dependent on the gate voltage.The CSD17556Q5BT is designed to provide low RDS-ON, high voltage, and high speed operation. It has a high current carrying capability and is capable of handling up to 40 mA. The device is made using the latest technology and is capable of operating with a switching frequency of up to 3 GHz.The device has a low input capacitance, making it a good choice for high frequency switching applications. The device also has a low Capacitance-Voltage (CV) characteristics, making it a reliable choice for power supply designs. The device also has a very low EMI circuit, making it suitable for sensitive applications.The device is a reliable choice for many applications. The device is well suited for switching applications such as display, LED lighting, and communication systems. The device is used in many automotive applications such as electric motors, battery management systems, and active safety systems. It is also used in industrial systems such as switch mode power supplies, motor drives, and electric vehicle charging. The device is also suitable for audio and digital applications.The CSD17556Q5BT is designed to be very user friendly. The device is easy to install, set up and use. The device is relatively cheap to purchase and is also easy to maintain. It is well suited for both commercial and hobby applications.In conclusion, the CSD17556Q5BT is a highly versatile device that is used in a wide range of applications. The device is capable of providing low on state resistance, high breakdown voltage, and high speed operation. The device is relatively cheap to purchase and is easy to maintain. It is an ideal choice for many applications, including display, LED lighting, motor control, switch mode power supplies, and digital applications.

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