CSD18532NQ5BT Discrete Semiconductor Products |
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Allicdata Part #: | 296-44042-2-ND |
Manufacturer Part#: |
CSD18532NQ5BT |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Texas Instruments |
Short Description: | MOSFET N-CH 60V 100A |
More Detail: | N-Channel 60V 100A (Ta) 3.1W (Ta), 156W (Tc) Surfa... |
DataSheet: | CSD18532NQ5BT Datasheet/PDF |
Quantity: | 500 |
Vgs(th) (Max) @ Id: | 3.4V @ 250µA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | 8-VSON-CLIP (5x6) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.1W (Ta), 156W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 5340pF @ 30V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 64nC @ 10V |
Series: | NexFET™ |
Rds On (Max) @ Id, Vgs: | 3.4 mOhm @ 25A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 100A (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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CSD18532NQ5BT is a high performance n-channel enhancement mode MOSFET transistor produced by Bourns, Inc, a global leader in electronic components for the automotive, industrial, healthcare, datacom, consumer, and communications industries. The CSD18532NQ5BT features a 5-volt gate threshold and a low gate threshold voltage version is also available (CSD18532PQ5BT). This makes it suitable for designs where a fast switching device is required.
The CSD18532NQ5BT has low RDS(on), low gate charge, and a wide operating temperature range. It is designed for applications that require a low on-resistance, high switching speed, and good thermal characteristics. The device is designed to handle high-speed switching applications where a low on-resistance device is required.
The main application fields of CSD18532NQ5BT are motor drives, Switching regulators and DC/DC converters and so on. In these applications, it is used as an electronic switch to switch a load on and off quickly. The device is also used for fast switching on inductive loads, such as DC motors and solenoids. CSD18532NQ5BT is suitable for low voltage application as its threshold voltage is low (5V).
The working principle of CSD18532NQ5BT is based on the fact that it is an enhancement-mode n-channel transistor. This means that it needs an external signal, in the form of the gate voltage, to turn it on. When the gate voltage is high enough to overcome the threshold voltage (Vth), the MOSFET turns on. This is because the gate voltage increases the conductivity of the channel, allowing more electrons to flow in the channel. As the electrons flow in the channel, the source voltage increases and the drain-source voltage drops, turning the transistor on. The Drain-Source voltage VDS of the transistor is proportional to the current ID flowing through it.
In summary, the CSD18532NQ5BT is a high performance n-channel enhancement mode MOSFET transistor which is suitable for low voltage applications that require a low on-resistance, high switching speed, and good thermal characteristics. It is commonly used in motor drives, Switching regulators and DC/DC converters as an electronic switch to switch a load on and off quickly. The working principle of CSD18532NQ5BT is based on the fact that it is an enhancement-mode n-channel transistor and its drain source voltage is proportionally dependent on the current flowing through it.
The specific data is subject to PDF, and the above content is for reference
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