CSD18533Q5AT

CSD18533Q5AT is a single-channel N-channel enhancement mode Power field-effect transistor (FET). It belongs to the CSD17xx7 family, which are designed specifically to reduce conduction losses related to the power device and provide enhanced thermal performance characteristics. Through advanced packaging and process technology, the CSD18533Q5AT provides a low on-state resistance and fast switching speed, especially in applications requiring switching current up to 35A and up to 40V. This makes it an ideal option for applications such as motor control and load switching.

The CSD18533Q5AT is powered by a small signal gate and MOSFET design. It offers a wide electrical operating range of up to 40V and has an on-resistance of 175mOhm, making it suitable for applications requiring power efficient designs that require minimal power loss. It is also capable of restoring performance over time, as the Power MOSFET design reduces the effect of power cycling.

The CSD18533Q5AT has a PowerMOSET technology which provides its enhanced thermal performance, reducing switching losses and allowing the device to operate over a much wider range. It also has a low body capacitance and minimized gate charge, making it suitable for fast switching times. Additionally, the CSD18533Q5AT offers internal protection features such as a temperature stable operating range, latch protection and a self-protection circuit.

The CSD18533Q5AT is capable of providing high safe operating area (SOA) and excellent power cycling stability. It offers impressive thermal performances, making it suitable for applications requiring high performance and efficient designs. Additionally, it offers automotive grade qualification, which makes it suitable for automotive applications. The CSD18533Q5AT also has an advanced package structure, making it suitable for high power density designs.

The working principle of the CSD18533Q5AT is simple. When a signal is applied to the gate, it creates a voltage potential between the source and the drain. This initiates the flow of electrons, creating an electric charge. This charge is distributed amongst the source, drain and substrate regions and creates a channel in the substrate through which the electrons can flow. The width of the channel and the amount of current flowing through is controlled by the voltage applied to the gate. By controlling the voltage, you can control the flow of current through the device.

The CSD18533Q5AT is used in a variety of applications, from motor control to load switching. It is suitable for applications requiring high power efficiency and fast switching times. Additionally, it offers automotive grade qualification, making it suitable for automotive applications. It is a great choice for those looking for an efficient and powerful MOSFET solution.