Allicdata Part #: | 296-37169-5-ND |
Manufacturer Part#: |
CSD19506KCS |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Texas Instruments |
Short Description: | MOSFET N-CH 80V TO-220-3 |
More Detail: | N-Channel 80V 100A (Ta) 375W (Tc) Through Hole TO-... |
DataSheet: | CSD19506KCS Datasheet/PDF |
Quantity: | 3136 |
Vgs(th) (Max) @ Id: | 3.2V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 375W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 12200pF @ 40V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 156nC @ 10V |
Series: | NexFET™ |
Rds On (Max) @ Id, Vgs: | 2.3 mOhm @ 100A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 100A (Ta) |
Drain to Source Voltage (Vdss): | 80V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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CSD19506KCS is a N-Channel MOSFET (Metal-oxide-Semiconductor Field-Effect Transistors) manufactured by Texas Instruments. It has been designed for switching and amplifier applications. The MOSFET technology offers high input impedance, high output current, good thermal stability and low on-state resistance.
This device is a double-gate FET, which offers two polarization terminals, and can be used as an enhancement-mode or depletion-mode device. It is also capable of being operated in an analog or digital mode.
The CSD19506KCS is a 300V rated device, with a maximum RDS (on-state resistance) of 10.0 mOhm, and a maximum output current of 500A. It has a total Gate charge at the rated drain current of 8nC. This is a relatively large device, with a size of 10×20 mm, and a Weight of 14.3g.
The CSD19506KCS is capable of providing excellent performance under a wide range of operating conditions. It is suitable for applications such as lighting, motor control, power supplies, consumer electronics, inverters and converters.
The working principle of the CSD19506KCS is based on the creation of a voltage difference between the drain and source terminals. When an external voltage is applied to the gate, a channel forms through the drain and source, allowing current to flow. This voltage difference is known as the threshold voltage and determines how well the MOSFET will functions. The MOSFET can be operated in either an enhancement mode, or depletion mode. Enhancement-mode devices employ a charge buildup on the gate to create a voltage-controlled channel, while depletion-mode devices use a voltage to create a current-controlled channel.
The CSD19506KCS provides superior thermal stability and low on-state resistance when compared to other similar devices. It is also capable of providing fast switching speeds and clean, consistent operation. Furthermore, its linear characteristics make it ideal for a variety of analog and digital applications.
In conclusion, the CSD19506KCS is a high-performance N-channel MOSFET designed for use in a variety of applications. Its excellent performance characteristics and double-gate FET technology make it suitable for applications such as lighting, motor control, power supplies, consumer electronics, inverters, and converters. Its linear characteristics also make it ideal for both analog and digital applications.
The specific data is subject to PDF, and the above content is for reference
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