DMN10H170SFDE-13

The DMN10H170SFDE-13 is a single N-channel Enhancement Mode MOSFET with fast switching speed, low driving power, and low gate threshold voltage. Equipped with a wide variety of features and a high degree of integration, this MOSFET is ideal for a range of applications.

Applications

The DMN10H170SFDE-13 can be utilized in a wide range of applications due to its high switching speed and low driving power. It is suitable for use in radio frequency (RF) power amplifiers, low voltage logic level power switch modules, buck and boost converters, and current driven switch circuits. Additionally, this MOSFET can be used in power management circuits, such as those found in battery operated units, automotive systems, and in portable electronic devices.

Working Principle

The DMN10H170SFDE-13 operates using a MOSFET transistor structure, meaning that operation is based on the movement of charge carriers, either from the source to the drain or from the source to the body. This implies that when the gate voltage is greater than the source voltage, charge carriers start to move from the source to the drain, leading to enhanced conduction. On the other hand, when the gate voltage is lower than the source voltage, charge carriers start to move from the source to the body, leading to a decrease in the current.

Additionally, the MOSFET also provides the advantage of low driving power, as the gate voltage is not directly linked to the current, meaning that the current will not be affected by the gate voltage. This means that the MOSFET can be operated with low power, while still providing high switching speeds.

Furthermore, the DMN10H170SFDE-13 features a low gate threshold voltage, which is the amount of voltage required on the gate electrode to switch the device on. This enables efficient operations, as the gate voltage required to operate the device is lower than in traditional MOSFETs, which results in a lower power consumption.

Conclusion

The DMN10H170SFDE-13 is an ideal choice for a wide range of applications due to its fast switching speed, low driving power, and low gate threshold voltage. It is suitable for use in RF power amplifiers, buck and boost converters, power management circuits, and current driven switch circuits. It also offers the advantage of low power consumption, as the gate voltage does not have to be increased in order to switch the device on.