DMN1019UFDE-7 Allicdata Electronics
Allicdata Part #:

DMN1019UFDE-7DITR-ND

Manufacturer Part#:

DMN1019UFDE-7

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET N CH 12V 11A U-DFN2020-6E
More Detail: N-Channel 12V 11A (Ta) 690mW (Ta) Surface Mount U-...
DataSheet: DMN1019UFDE-7 datasheetDMN1019UFDE-7 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 800mV @ 250µA
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: U-DFN2020-6 (Type E)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 690mW (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2425pF @ 10V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 50.6nC @ 8V
Series: --
Rds On (Max) @ Id, Vgs: 10 mOhm @ 9.7A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Drain to Source Voltage (Vdss): 12V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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DMN1019UFDE-7 is a type of field-effect transistor (FET)s, more precisely a metal oxide semiconductor FET (MOSFET). It is a single charge-carrier device, used for switching and amplifying electronic signals. It is typically used in automation process control systems such as those for industrial robots, electronic consumer products, and power supplies.

The term "field-effect" refers to the way this kind of transistor works. It utilizes the electric current running through its gate electrodes to regulate the flow of current between its source and drain. When voltage is applied to the gate, it forms a potential barrier which controls the flow of current between the source and the drain. The terms "metal oxide semiconductor" is derived from the fact that the gate electrodes of this type of transistor are made of metal and a layer of oxide.

An essential feature of the DMN1019UFDE-7 is its fast switching speed. This is especially important for applications such as high-speed digital systems, where the speed of the transistor can make all the difference between success and failure of the system. The device also has excellent performance in terms of current leakage, temperature stability and power loss, which makes it a great choice for automated process control systems.

The DMN1019UFDE-7 is also quite reliable and efficient for use in the power supply of electronic devices such as computers and mobile phones. The source and drain regions of the device are designed to operate over a wide range of temperatures, which results in a high efficiency power supply. Furthermore, its capabilities as a low-noise amplifier make it well suited for use in sensitive analog systems, such as those used in medical equipment.

The basic operating principle of the DMN1019UFDE-7 is quite simple. When voltage is applied to the gate, it forms a potential barrier that prevents current from flowing between the source and the drain. When the voltage is removed, the barrier is broken and current begins to flow. It is important to note that the amount of current allowed to flow is strictly regulated by the voltage applied to the gate.

The DMN1019UFDE-7 has a variety of applications in both digital and analog systems. Its fast switching speed and reliability make it ideal for automated process control, while its low-noise amplifier capabilities make it perfect for sensitive analog systems. Furthermore, its performance in terms of current leakage, temperature stability and power loss makes it a great choice for use in power supplies for electronic consumer products.

The specific data is subject to PDF, and the above content is for reference

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