Allicdata Part #: | DMN10H170SK3Q-13DITR-ND |
Manufacturer Part#: |
DMN10H170SK3Q-13 |
Price: | $ 0.20 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CHAN 61V 100V TO252 |
More Detail: | N-Channel 100V 12A (Tc) 42W (Tc) Surface Mount TO-... |
DataSheet: | DMN10H170SK3Q-13 Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.17438 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | TO-252 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 42W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1167pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 9.7nC @ 10V |
Series: | Automotive, AEC-Q101 |
Rds On (Max) @ Id, Vgs: | 140 mOhm @ 5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 12A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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DMN10H170SK3Q-13 is a N-channel MOSFET produced by Nexperia. This component offers a wide range of applications and can be used where switching and amplifier applications are required.
The MOSFET is a three-terminal device composed of a source, a drain, and a gate. The source and the drain are used to connect to the device that needs to be switched or amplified while the gate allows a voltage to be applied to control the device’s behavior. DMN10H170SK3Q-13 is a vertical MOSFET with a voltage block of 170V, a total gate charge of 9.8 nC, and an ON resistance of 0.0048Ω at 10V.
The device is typically used for power switching and amplification applications where the voltage blocking requirement is up to 170V. This includes high voltage and high frequency power supplies, LED lighting, motor control, and AC/DC normal mode converters.
In terms of working principle, the DMN10H170SK3Q-13 works on the principle of MOSFET action. When a voltage is applied to the gate, a thin layer of inversion charge near the source and drain junction is generated. This inversion charge opens or closes the channel, allowing current to flow through the device. The higher the voltage applied to the gate the more inversion charge is generated, hence it allows a higher amount of current to flow through the device.
The device has a high speed switching capability and provides excellent switching performance. It is capable of handling high current and can withstand spikes of up to 170V, depending on its operating temperature. This makes it suitable for use in high voltage, high frequency applications. Additionally, it has a low on-state resistance, which allows it to deliver high power efficiently.
The DMN10H170SK3Q-13 is also low power consuming and requires low gate drive current. This makes it suitable for applications that require low power consumption and are sensitive to noise.
Overall, DMN10H170SK3Q-13 is a powerful N-channel MOSFET device that offers a wide range of applications. It has a high voltage blocking capability, a low on-state resistance, and a low gate drive current requirement, making it suitable for use in high voltage, high frequency applications, LED lighting, motor control, and AC/DC normal mode converters.
The specific data is subject to PDF, and the above content is for reference
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