Allicdata Part #: | DMN10H170SVT-7DITR-ND |
Manufacturer Part#: |
DMN10H170SVT-7 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 100V 2.6A TSOT26 |
More Detail: | N-Channel 100V 2.6A (Ta) 1.2W (Ta) Surface Mount T... |
DataSheet: | DMN10H170SVT-7 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | SOT-23-6 Thin, TSOT-23-6 |
Supplier Device Package: | TSOT-26 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.2W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1167pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 9.7nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 160 mOhm @ 5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 2.6A (Ta) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The DMN10H170SVT-7 is a very versatile and important type of transistor. It is a single MOSFET, or metal-oxide-semiconductor field-effect transistor, belonging to the category of field-effect transistors (FETs). The DMN10H170SVT-7 is manufactured by leading brand Digi-Key Corporation and is widely used in various industries.
This type of MOSFET is a high-speed device that can be used in a variety of electrical and digital projects. Given its small size and low power consumption, it is suitable for portable or low power applications. It is also characterized by its low on-state resistance. This makes it an ideal choice for high-frequency switching applications such as chopper, DC-to-DC converter, amplifier, oscillator and power amplifier.
The working principle of the DMN10H170SVT-7 is based on the principle of FETs. FETs work by allowing the flow of electrons in an electric field and between two specified terminals. Therefore, it is possible to control the current flow between two terminals and to adjust the level of conduction as needed. The working principle of the DMN10H170SVT-7 is based on this theory.
Specifically, the DMN10H170SVT-7 works by using a drain-source voltage that is applied to it, together with a gate voltage. The gate voltage is responsible for regulating the resistance of the channel, controlling the current flow. It can either repel or induce electrons to move through the channel. This allows for precise and consistent control of current flow.
Although the DMN10H170SVT-7 is a single MOSFET, it is surprisingly versatile. In particular, it has a wide range of uses. It can be used in audio and video applications, where its low on-state resistance and fast switching speeds are useful. It is often used in power supplies and motor control circuits.
Additionally, the DMN10H170SVT-7 is used in many types of signal conditioning, as its fast switching speeds allow it to react quickly to signals. It is also used in defense and aerospace applications, as it can operate safely and smoothly in extreme temperatures. Lastly, it is sometimes used in medical equipment, such as pacemakers and other lifesaving devices.
The DMN10H170SVT-7 is a very useful type of MOSFET, and it has a wide range of applications. Its operation is based on the principle of FETs, and it can be used for fast switching speeds and precise control of current flow. Its low on-state resistance makes it suitable for low-power applications, and it can also tolerate high temperatures. Therefore, it is an ideal choice for many types of digital and electrical projects.
The specific data is subject to PDF, and the above content is for reference
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