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DMN10H170SVTQ-7 Application Field and Working Principle

The DMN10H170SVTQ-7 is part of a family of insulated gate technology electronic power switches developed by Diodes Incorporated. These devices are used for a wide range of applications including industrial, automotive, audio, communications and mobile applications. They are known for their low on-state resistance (RDS (on)), low turn-on and turn-off losses, and fast switching performance.

The DMN10H170SVTQ-7 is a standard-level MOSFET (metal-oxide-semiconductor field-effect transistor). It is an insulated-gate bipolar transistor (IGBT) with two insulated gates- producing a 500V breakdown voltage. Its applications range from general power switching, voltage and current regulation to motor control. It features low on-state resistance (RDS (on)) and is suitable for high power applications.

Working Principle of the DMN10H170SVTQ-7 Device

The DMN10H170SVTQ-7 is an insulated gate bipolar transistor (IGBT) that functions as a voltage and current limiting switch. The device operates by using the voltage applied to its gate to control the flow of current from the source to the drain. When the gate voltage is below the threshold voltage (Vth), the device blocks the current flow from the drain to the source. When the gate voltage is above the Vth, the device allows current to flow from the source to the drain.

The device is equipped with a built-in body diode, which is a component used to switch between voltage conditions on the drain and the source. The body diode also allows the current to take a reverse route if needed. The body diode offers a low on-state resistance,which substantially reduces the switching losses compared to other types of devices. This feature gives the device an unsurpassed level of efficiency.

The DMN10H170SVTQ-7 comes with several protection features, including an over current protection, temperature protection, and over voltage protection. These protections ensure the safe operation of the device and protect it from damage. The device is also equipped with a built-in anti-shoot-through protection that prevents the two transistors in the device from turning simultaneously and thereby draining the gate voltage.

Conclusion

The DMN10H170SVTQ-7 is an insulated gate bipolar transistor (IGBT) with two insulated gates that produces a 500V breakdown voltage. Its applications range from general power switching, voltage and current regulation to motor control, making it suitable for a variety of applications. The device features low on-state resistance (RDS (on)) and fast switching performance, as well as several safety and protection features to ensure its safe operation. In conclusion, the DMN10H170SVTQ-7 is an excellent choice for power switching and motor control applications.

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