Allicdata Part #: | DMN10H220LE-13DITR-ND |
Manufacturer Part#: |
DMN10H220LE-13 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 100V 2.3A SOT223 |
More Detail: | N-Channel 100V 2.3A (Ta) 1.8W (Ta) Surface Mount S... |
DataSheet: | DMN10H220LE-13 Datasheet/PDF |
Quantity: | 1000 |
Gate Charge (Qg) (Max) @ Vgs: | 8.3nC @ 10V |
Base Part Number: | DMN10H22 |
Package / Case: | TO-261-4, TO-261AA |
Supplier Device Package: | SOT-223 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.8W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 401pF @ 25V |
Vgs (Max): | ±20V |
Series: | -- |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Rds On (Max) @ Id, Vgs: | 220 mOhm @ 1.6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 2.3A (Ta) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The DMN10H220LE-13 is a high performance enhancement mode monolithic MOSFET (metal–oxide–semiconductor field-effect transistor). This type of transistor utilizes a thin gate oxide and charges in a single structure in order to provide better electrical properties such as high transconductance, high frequency response, and low noise. The transistor is available in a TO-220 package, allowing for efficient heat-sinking and improved system reliability.
The application field for the DMN10H220LE-13 includes motor drives, switching power supplies, and other related high power devices. This device is also suitable for high-side current sensing applications and for applications that require high voltage and current levels. This MOSFET’s design enables it to handle a high peak output current, meaning it can be applied to high power switching applications. It also provides low on-resistance and high gate-source voltage withstand.
The DMN10H220LE-13 is usually used as a power transistor in a power supply, especially when applying large currents. It is a critical component in the power switching circuitry and is used to control the energy flowing through the system. For this reason, it is an important device since it is used to provide superior power management capabilities. The device is usually connected to a drive circuit as an output stage, which provides control of the power output by providing either a turn-on signal or turn-off signal to the device.
As for the working principle behind the DMN10H220LE-13, it uses a depletion mode N-channel field effect transistor in a single package. In simple terms, it has a gate terminal and two other terminals, drain and source. A voltage signal between the gate and drain terminals changes the current flow between the two other terminals. When the gate-drain voltage is high, the current flows from the drain and source terminals, and when the gate-drain voltage is low, the current is blocked and no current is allowed to flow. This type of transistor is usually used to control high voltages and currents. In addition, it can also be used as an amplifier, switching regulator, and voltage translation device.
In conclusion, the DMN10H220LE-13 is a high performance monolithic MOSFET which provides superior electrical properties including high transconductance, high frequency response, and low noise. It can be used in various applications such as motor drives, switching power supplies, and other related high power devices. Additionally, it can also be used as an amplifier, switching regulator, and voltage translation device. The working principle behind this device involves the use of a depletion mode N-channel field effect transistor in a single package which allows the current flow to be controlled by a voltage signal.
The specific data is subject to PDF, and the above content is for reference
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