DMN15H310SE-13

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The DMN15H310SE-13 is a high performance N-channel enhancement-mode Field Effect Transistor (FET) commonly used in high voltage and current applications. It is designed to offer a very low on-resistance to conserve power and minimize losses. Its benefits include low gate charge, low capacitance and excellent thermal stability. In addition to its physical characteristics, the DMN15H310SE-13 also features an ultra-low drain-source on-resistance (RDS(on)) of 3.2 ohms and a maximum gate-source voltage (Vgs) of 30V. It is the perfect choice for applications where high power, stable operation, and maximum efficiency are desired.

The DMN15H310SE-13 offers a variety of uses and has several application fields and working principles.

Vehicle Applications

The DMN15H310SE-13 can be used for automotive power supply, engine control, and motor control applications. It can be used in vehicle battery management systems, voltage clamp circuits, and traction motor controllers. It is highly reliable and is designed to withstand very high temperatures, making it ideal for harsh environments in vehicles.

Power Control Applications

In power control applications, the DMN15H310SE-13 is often used as an ideal diode, or as a switch in synchronous rectifiers. Because of its low RDS(on) and high current handling capabilities, it is well-suited for use in switched mode power supplies, SMPS and DC-DC converters. It is also used in power management circuits, where it can be used to generate frequency pulses for precise control of power.

Other Applications

The DMN15H310SE-13 is also used in a variety of other applications. It can be used in RF power amplifiers, power amplifiers and differential amplifiers. It can also be used in gain control and loudspeaker protection. It is ideal for low voltage applications in electronic circuit protection, and can even be used in LED current drivers and LED dimming control circuits.

Working Principle

The DMN15H310SE-13 is an N-Channel MOSFET and consists of three terminals - a source, a drain, and a gate. When a voltage is applied to the gate, a corresponding electric field is created and then the channel between the source and the drain can be opened or closed. This allows for the flow of electrons from the source to the drain. By controlling the gate voltage, the current flow can be regulated, allowing for precise control of the load current.

The MOSFET operates under the principle of conductance modulation, which means that the current flow between the source and the drain is directly proportional to the gate voltage. The total current flow is determined by the gate-source voltage (Vgs) and the drain-source voltage (Vds). The DMN15H310SE-13 is designed to offer a very low on-resistance to conserve power and minimize losses. Its maximum gate-source voltage (Vgs) is 30V.

The DMN15H310SE-13 is a versatile device with a wide range of applications. Its impressive characteristics make it an excellent choice for applications where high power, stable operation, and maximum efficiency are desired.

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