DMN10H120SE-13

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The DMN10H120SE-13 is a silicon complex power integrated MOSFET designed for use in a wide range of applications. It provides low on-resistance and high avalanche energy rate. It is designed to switch DC and pulsed loads, with its isolation voltage of up to 30V and gate charge of 13nC. Its maximum drain-source voltage is 10V, and is connected to the gate with a 2mm spacing.

Application field of DMN10H120SE-13
The DMN10H120SE-13 power MOSFET is suitable for many areas, such as unipolar and bipolar switching, dc/dc converters and power amplifier applications. It is particularly suitable for applications that require a high blocking voltage and high avalanche energy rate. It is also well suited for high-frequency applications because of its low on-resistance and low gate charge.

Working principle of DMN10H120SE-13
The DMN10H120SE-13 MOSFET is a single-gate Field-Effect Transistor (FET) that works by blocking and allowing the flow of electrons. The gate can be likened to a valve that allows electrons to flow either way, depending on its voltage. Zero voltage will stop the current flow, although when negative voltage is applied, the current will move in the opposite direction. The current depends on the size of the gate’s electric charge, and the larger the charge, the higher the current. When the gate voltage is increased, the FET starts conducting. The voltage in the source and drain determine the maximum current that can flow.

DMN10H120SE-13 is an attractive choice for high power applications that require a low on-resistance and high avalanche energy rate. The on-resistance is low because of the small size of the FET’s threshold voltage. In addition, the wide gate-source spacing allows for more efficient current flow, making it suitable for applications that require high power switching. The maximum drain-source voltage of 10V also allows for more flexibility when it comes to the voltage requirements of the application.

In general, the DMN10H120SE-13 is an ideal choice for high power applications, providing a low on-resistance, high avalanche energy rate, and a wide gate-source spacing. Its high blocking voltage and small threshold voltage make it suitable for high power applications, while its 2mm gate-source spacing allows for efficient current flow. In addition, its maximum drain-source voltage of 10V provides additional flexibility when it comes to voltage requirements.

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