DMN2011UFDF-13

Vgs(th) (Max) @ Id:	1V @ 250µA
Package / Case:	6-UDFN Exposed Pad
Supplier Device Package:	U-DFN2020-6 (Type F)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	2.1W (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2248pF @ 10V
Vgs (Max):	±12V
Gate Charge (Qg) (Max) @ Vgs:	56nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	9.5 mOhm @ 7A, 4.5V
Drive Voltage (Max Rds On, Min Rds On):	1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C:	14.2A (Ta)
Drain to Source Voltage (Vdss):	20V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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Overview

The DMN2011UFDF-13 is a high-power MOSFET used in many different applications such as buffer drivers, high-power switching circuits, and light dimmer applications. In this article, we will discuss the application field and principles of the DMN2011UFDF-13 MOSFET in detail.

Application Field

The DMN2011UFDF-13 is a 60V N-channel MOSFET designed to provide efficient power conversion and switch control in automotive and industrial electronics. The device has excellent low-drain-to-source on resistance (RDS(ON) < 0.05Ω). This makes it ideal for applications where low resistance provides better efficiency, such as SMPS, power factor correction, and DC-DC converters. It also has low gate charge and fast switching time, making it suitable for high-frequency applications. The DMN2011UFDF-13 is an ideal choice for replacement of lower power, P-channel MOSFETs in RF power amplifiers. For example, it can be used in WiMAX systems and base station amplifier applications. It is also used in automotive electronics applications such as motor and solenoid control, lighting, and navigation systems.

Working Principle

The DMN2011UFDF-13 MOSFET is operated using two voltage signals. The gate terminal requires a voltage of more than 10V to drive the channel into saturation and reduce RDS(ON) to its designed value. The voltage at the source terminal can then be controlled to regulate the current flow. When the gate voltage is high, the MOSFET channels are fully opened and current can flow from the drain to the source. This is known as the ON state. When the gate voltage is low, the MOSFET channels are completely blocked, and no current can flow from the drain to the source. This is known as the OFF state.The MOSFET can also be operated in the linear region, where the drain and source voltages are both above the gate voltage and the current flow is proportional to the gate voltage.The DMN2011UFDF-13 MOSFET also has a low ON-state resistance and a low gate charge, meaning it can operate with high speed. This makes it suitable for high-power switching applications in high-frequency applications. The device is also robust and capable of handling high-power surges and transients due to its reverse body diode protection.

Conclusion

The DMN2011UFDF-13 is a 60V N-channel MOSFET designed for efficient power conversion and switch control. It is widely used in different applications, such as SMPS, power factor correction, and DC-DC converters. It has excellent low-drain-to-source on resistance and low gate charge, making it ideal for high-frequency applications. It is also robust and capable of handling high-power surges and transients due to the reverse body diode protection.

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