DMT6004SPS-13 Allicdata Electronics
Allicdata Part #:

DMT6004SPS-13-ND

Manufacturer Part#:

DMT6004SPS-13

Price: $ 0.44
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET N-CH 60V 23A POWERDI5060
More Detail: N-Channel 60V 23A (Ta) 2.5W (Ta) Surface Mount Pow...
DataSheet: DMT6004SPS-13 datasheetDMT6004SPS-13 Datasheet/PDF
Quantity: 1000
1 +: $ 0.44000
10 +: $ 0.42680
100 +: $ 0.41800
1000 +: $ 0.40920
10000 +: $ 0.39600
Stock 1000Can Ship Immediately
$ 0.44
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: 8-PowerTDFN
Supplier Device Package: PowerDI5060-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 4556pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 95.4nC @ 10V
Series: Automotive, AEC-Q101
Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 50A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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DMT6004SPS-13 is a type of MOSFET, or metal–oxide–semiconductor field-effect transistor, commonly used in a range of applications. It is a four-component device with a dual gate structure, meaning that there are both an anode and a cathode connection. In addition, it operates on the principle of the field-effect, meaning the current through the device is affected by an electric field.

The DMT6004SPS-13 has a maximum drain-source voltage rating of 600V, a continuous drain current rating of 4A, a threshold voltage of 1.3V, and a drain-source on-resistance of 0.36ohms, as well as a breakdown voltage of 810V. In terms of applications, this MOSFET is most commonly used in power electronics, such as in motor control systems. It is also used in a range of circuits, such as voltage regulators and power converters, where it can be used to switch and control current.

The basic operating principle of this MOSFET is that, when the electric field applied between the gate and the source is greater than the threshold voltage of the device, a channel is established between the source and the drain, allowing the current to flow. This is known as the \'on\' state. Conversely, when the electric field is less than the threshold voltage of the device, the channel is interrupted and the current stops flowing. This is known as the \'off\' state.

In terms of operation and performance, the DMT6004SPS-13 has a relatively high switching speed, making it suitable for high-frequency applications. In addition, it has an exceptionally low on-state resistance offering, allowing for a high-current capacity. This makes it an optimal choice for applications such as power converters, where high currents and efficiency are essential.

The DMT6004SPS-13 is an ideal choice for a variety of circuit and power electronics applications, as it has a low on-state resistance, a high switching speed, and a robust design. With its dual gate structure and high voltage breakdown, it offers enhanced protection and reliability in any device it is used in. This makes it an excellent choice for designers who require a reliable and versatile MOSFET.

The specific data is subject to PDF, and the above content is for reference

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