FDB0165N807L

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The FDB0165N807L is a depletion-mode FET (Field Effect Transistor). It is commonly called a lateral MOSFET (Metal Oxide Semiconductor Field Effect Transistor). It has a drain-source current rating of 4A and is designed for use in switching applications such as in automotive electronics, audio amplifiers, and power supplies. The lateral MOSFET has a drain-source breakdown voltage of 65V and is suitable for operation in a wide temperature range from -55°C to 125°C.

Lateral MOSFET transistors offer several advantages compared to traditional transistors, including higher switching speed, smaller device size and cost, and lower on-state resistance. This makes them ideal for many applications, especially in high-speed switching circuits. They are also suitable for use in power amplifiers and power supply circuits.

The working principle of FDB0165N807L is based on the transfer of carriers within the channel region between the source and drain. This transfer of carriers is controlled by a gate electrostatic field and is known as field effect. The gate electrostatic field determines the channel resistance, thus controlling the flow of source-drain current.

When a voltage is applied to the gate, the electric field depletes the channel region and the current flow between the source and drain is decreased. This is the principle of operation for an n-type depletion-mode MOSFET device, such as the FDB0165N807L. This type of device requires a negative gate voltage to turn it on and off.

FDB0165N807L finds its application for high frequency/switching power supply, automotive power electronics, audio, and other electronic switching applications. These devices are also suited for high-speed processor applications, synchronous rectifiers and switching regulators, power inverters and motor controllers.

Due to its wide drain-source breakdown voltage of 65V, FDB0165N807L is suitable for many circuit designs. It has low on-resistance and is capable of handling large currents up to 4A. The device has a low dynamic gate capacitance and thus makes it ideal for high-frequency operation, with a typical switching time of 0.03µs.

Overall, the FDB0165N807L is a versatile, high-performance device that can be used in a variety of applications. It offers high reliability and is suitable for operation in a wide temperature range from -55°C to 125°C. Additionally, its lower on-state resistance increases efficiency and reduces power dissipation.

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