| Allicdata Part #: | FDB060AN08A0TR-ND |
| Manufacturer Part#: |
FDB060AN08A0 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 75V 80A TO-263AB |
| More Detail: | N-Channel 75V 16A (Ta), 80A (Tc) 255W (Tc) Surface... |
| DataSheet: | FDB060AN08A0 Datasheet/PDF |
| Quantity: | 1600 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package: | D²PAK |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 255W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 5150pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 95nC @ 10V |
| Series: | PowerTrench® |
| Rds On (Max) @ Id, Vgs: | 6 mOhm @ 80A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 16A (Ta), 80A (Tc) |
| Drain to Source Voltage (Vdss): | 75V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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FDB060AN08A0 is a kind of MOSFET (Metal Oxide Semiconductor Field Effect Transistor), belonging to single family. FETs play increasingly important roles in modern electronics, they are often used as switch, amplifier and rectifier. This FDB060AN08A0 transistor is an advanced type, featuring high speed, low-resistance switching, and high-current capacity. By better understanding its application fields and working principles, we can decide whether it is suitable for our projects.
Application Field
FDB060AN08A0 is mainly applied in high-frequency switching circuits, such as switching power supplies, audio amplifiers, and motor control systems. Besides, it can be used as a power switch in many applications, including small home appliances, lighting controls, batteries, toys, and any modern electronic equipment.
Working Principle
MOSFETs are voltage-controlled devices meaning that current, which passes through them, is proportional to the voltage applied to the gate-source pin. FDB060AN08A0’s gate source functions as an insulated gate for a FET, current flows between the drain and source terminals when the gate voltage is above the specific gate threshold voltage which switches on the transistor. The size of the current is determined by the voltage applied to the gate. When the gate pulse is lower than the gate threshold voltage, the FDB060AN08A0 transistor doesn’t allow any current through it, it is said to be in the cutoff mode. In comparison to BJTs (bipolar junction transistors), FETs generally allow much greater currents. One big advantage of MOSFETs, such as FDB060AN08A0, over BJTs is that they can be driven with logic gate output signal.
Conclusion
To sum up, FDB060AN08A0 is a single MOSFET transistor type with high speed, low-resistance switching and high-current capacity. It is mainly used for high-frequency switching, such as switching power supplies, DC/DC converters, audio amplifiers and motor control systems. The gate-source pin of FDB060AN08A0 works as an insulated gate, allowing or suspending the current precisely on the basis of the voltage applied. It is able to be driven by logic gate output signal. By better understanding FDB060AN08A0’s application fields and working principles, we can decide whether it is suitable for our projects.
The specific data is subject to PDF, and the above content is for reference
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FDB060AN08A0 Datasheet/PDF