Allicdata Part #: | FDB0630N1507LTR-ND |
Manufacturer Part#: |
FDB0630N1507L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 150V 130A |
More Detail: | N-Channel 150V 130A (Tc) 3.8W (Ta), 300W (Tc) Surf... |
DataSheet: | FDB0630N1507L Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-7, D²Pak (6 Leads + Tab) |
Supplier Device Package: | D²PAK (TO-263) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.8W (Ta), 300W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 9895pF @ 75V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 135nC @ 10V |
Series: | PowerTrench® |
Rds On (Max) @ Id, Vgs: | 6.4 mOhm @ 18A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 130A (Tc) |
Drain to Source Voltage (Vdss): | 150V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The FDB0630N1507L is a Field Effect Transistor (FET) that can be used in power electronics applications. It is a single MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) which has a very low on-resistance and low capacitance giving it favorable performance characteristics in high frequency operation.
The FDB0630N1507L is constructed with a source, a body, and a drain. The source is a metal-oxide layer that makes contact between the transistor and the power supply. The body is an insulated gate that controls the flow of current between the source and the drain. The drain is a metal strip that carries current to the load.
The FDB0630N1507L’s working principle is based on the principles of operation of a Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET). It is designed to be used in power electronics applications, where it provides high frequency operation and low capacitance. The MOSFET works as an electronically controlled switch which works by applying a voltage to the gate. When this voltage is applied, it creates a field which causes electrons to flow from the source to the drain. This flow of electrons can be adjusted by changing the voltage applied to the gate.
The FDB0630N1507L can be used in a variety of applications in power electronics. These applications include high frequency switching, as well as power conversion and transfer. It can also be used in high power, high efficiency power supplies, inverters, and DC/DC converters. The low capacitance of the device and its ability to choose frequencies makes it ideal for high frequency applications such as radio frequency power amplifiers.
The FDB0630N1507L is also ideal for use in automotive applications such as powertrain, control systems, body speed controls, and HVAC systems. Due to its low capacitance and high current capacity, the FDB0630N1507L can be used in motor control systems as well as in fuel injector, ignition, and valve control systems. Its combination of low on-resistance and low capacitance make the FDB0630N1507L an ideal choice for applications requiring precise control during peak power operations.
In summary, the FDB0630N1507L is a single MOSFET with a very low on-resistance and low capacitance giving it favorable performance characteristics in high frequency operation. It is ideal for a wide range of power electronics applications including high frequency switching, power conversion and transfer, high power, high efficiency power supplies, inverters, and DC/DC converters, as well as automotive applications such as powertrain control systems, body speed, and HVAC systems. Its combination of low on-resistance and low capacitance make the FDB0630N1507L an ideal choice for applications requiring precise control during peak power operations.
The specific data is subject to PDF, and the above content is for reference
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