FDB035AN06A0 Allicdata Electronics
Allicdata Part #:

FDB035AN06A0TR-ND

Manufacturer Part#:

FDB035AN06A0

Price: $ 2.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 60V 80A TO-263AB
More Detail: N-Channel 60V 22A (Ta), 80A (Tc) 310W (Tc) Surface...
DataSheet: FDB035AN06A0 datasheetFDB035AN06A0 Datasheet/PDF
Quantity: 800
1 +: $ 2.00000
10 +: $ 1.94000
100 +: $ 1.90000
1000 +: $ 1.86000
10000 +: $ 1.80000
Stock 800Can Ship Immediately
$ 2
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D²PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 310W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 6400pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 124nC @ 10V
Series: PowerTrench®
Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 80A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 80A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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FDB035AN06A0, a transistor manufactured by Fairchild Semiconductor, is a high-density, high-efficiency, low-dissipation transistors suitable for use in a variety of applications. In this article, we will look at the application field and working principle of FDB035AN06A0.

FDB035AN06A0 is an N-channel MOSFET, a type of metal-oxide-semiconductor field-effect transistor. This type of transistor is commonly found in power electronics and industrial power control systems, but is also well-suited for use in precision audio processing and switching applications. FDB035AN06A0’s properties make it well-suited for many different uses.

FDB035AN06A0 features a wide operating frequency range. It’s capable of switching frequencies from 7 Hz to 1 MHz, and its low-dissipation design allows it to dissipate power efficiently with no need for a heatsink. The FET also features a low on-resistance of 0.052 ohms, making it ideal for applications where low power consumption is important.

The principle of operation of an N-channel MOSFET is straightforward. When the gate voltage is higher than the source voltage, the FET is in a “ on” state, allowing current to flow through it. When the gate voltage is lower than the source voltage, the transistor is in a “off” state, blocking current flow. This type of transistor is typically used in switching applications such as power converters, voltage regulators, and power electronics systems.

Another feature of FDB035AN06A0 is its low gate-source capacitance. This helps to ensure high performance in applications where switching speeds are important, such as in precision audio processing and switching applications. The transistor also features temperature protection circuitry which prevents it from operating at higher temperatures and ensures safe operation over a wide temperature range.

In addition to its application in power electronics and industrial power control systems, FDB035AN06A0 is also suitable for low-noise video applications. Its low dissipation and gate-source capacitance features make it suitable for use in video switchers, LCD backlights, and similar applications.

In summary, FDB035AN06A0 is a high-density, high-efficiency transistor suitable for use in a variety of applications. Its wide operating frequency range, low on-resistance, and low gate-source capacitance make it well-suited for use in precision audio processing and switching applications, and its low-dissipation design makes it an excellent choice for applications where low power consumption is important. Its temperature protection circuitry ensures safe operation over a wide temperature range, making it suitable for use in low-noise video applications as well.

The specific data is subject to PDF, and the above content is for reference

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