
Allicdata Part #: | FDB035AN06A0TR-ND |
Manufacturer Part#: |
FDB035AN06A0 |
Price: | $ 2.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 80A TO-263AB |
More Detail: | N-Channel 60V 22A (Ta), 80A (Tc) 310W (Tc) Surface... |
DataSheet: | ![]() |
Quantity: | 800 |
1 +: | $ 2.00000 |
10 +: | $ 1.94000 |
100 +: | $ 1.90000 |
1000 +: | $ 1.86000 |
10000 +: | $ 1.80000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D²PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 310W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 6400pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 124nC @ 10V |
Series: | PowerTrench® |
Rds On (Max) @ Id, Vgs: | 3.5 mOhm @ 80A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 22A (Ta), 80A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
FDB035AN06A0, a transistor manufactured by Fairchild Semiconductor, is a high-density, high-efficiency, low-dissipation transistors suitable for use in a variety of applications. In this article, we will look at the application field and working principle of FDB035AN06A0.
FDB035AN06A0 is an N-channel MOSFET, a type of metal-oxide-semiconductor field-effect transistor. This type of transistor is commonly found in power electronics and industrial power control systems, but is also well-suited for use in precision audio processing and switching applications. FDB035AN06A0’s properties make it well-suited for many different uses.
FDB035AN06A0 features a wide operating frequency range. It’s capable of switching frequencies from 7 Hz to 1 MHz, and its low-dissipation design allows it to dissipate power efficiently with no need for a heatsink. The FET also features a low on-resistance of 0.052 ohms, making it ideal for applications where low power consumption is important.
The principle of operation of an N-channel MOSFET is straightforward. When the gate voltage is higher than the source voltage, the FET is in a “ on” state, allowing current to flow through it. When the gate voltage is lower than the source voltage, the transistor is in a “off” state, blocking current flow. This type of transistor is typically used in switching applications such as power converters, voltage regulators, and power electronics systems.
Another feature of FDB035AN06A0 is its low gate-source capacitance. This helps to ensure high performance in applications where switching speeds are important, such as in precision audio processing and switching applications. The transistor also features temperature protection circuitry which prevents it from operating at higher temperatures and ensures safe operation over a wide temperature range.
In addition to its application in power electronics and industrial power control systems, FDB035AN06A0 is also suitable for low-noise video applications. Its low dissipation and gate-source capacitance features make it suitable for use in video switchers, LCD backlights, and similar applications.
In summary, FDB035AN06A0 is a high-density, high-efficiency transistor suitable for use in a variety of applications. Its wide operating frequency range, low on-resistance, and low gate-source capacitance make it well-suited for use in precision audio processing and switching applications, and its low-dissipation design makes it an excellent choice for applications where low power consumption is important. Its temperature protection circuitry ensures safe operation over a wide temperature range, making it suitable for use in low-noise video applications as well.
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