FDB045AN08A0 Discrete Semiconductor Products

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The FDB045AN08A0 is a logic-level Gate Drive N-Channel Cool MOS™ Power Transistor. This device is designed for use with high efficiency synchronous rectification in isolated DC/DC converter designs, as both a high and low side switch. This article will discuss the application fields, and provide information as to the operating principle of the device, in order to understand the comprehensively its capabilities and design considerations.

Backgroud

Compared with bipolar transistors, FETs (Field effect transistors) generally provide superior performance and power efficiency in power applications. Generally speaking, FETs are divided into two categories, MOSFETs (Metal-Oxide-Semiconductor Field Effect Transistors) and IGFETs (Insulated Gate Field Effect Transistors). As MOSFETs use metal-oxide insulation between the gate and semiconductor materials unlike anNIGFET, and they also come in both N-channel and P-channel types, making them extremely suitable for electronic circuits. They are found throughout the industry, with uses ranging from analogue computing to the PC\'s processor, due to the effective combination of performance, efficiency and cost.

The FDB045AN08A0

The FDB045AN08A0 is single N-channel MOSFET, specifically designed for high efficiency synchronous rectification in isolated DC/DC converter designs. It can be used as both a high and low side switch, as the gate drive is designed for "Low" Logic Level operation. Moreover, this device has a drain and source which are both capable of handling up to 40V, meaning that it can provide the designer with the security of superior voltage tolerance. The device has an integreated Trench Gate Structure and is capable of offering an impressive on resistance of 45 mΩ (max). The FDB045AN08A0 offers a listed ‘RDS(on)’ of less than 45 mΩ, making it capable of delivering high power switching rates and power efficiency, while ensuring that heating, losses are minimized and power saving achieved.

Applications

The FDB045AN08A0 device is extremely suitable for a wide variety of usage in both isolated and non-isolated DC/DC converter applications. Measures such as input voltage reversing protection and over-current control can be integrated with this device, making it well-suited to applications such as power adapters, LED drivers, AC/DC converters, flyback converters, switched mode power supplies, battery powered applications and in automotive applications. This device is also capable of working at both low and high electrical potentials.

Working Principle

When a positive gate voltage is applied to the Gate, which is the central point of the FET, the positive charge ‘repels’ away from the p type channel and in turn attracts additional electrons to the channel. With sufficient voltage, the electrons forms a closed loop between the source and drain. This forms a connection known as an ‘inversion layer’, which effectively produces an electrical conduction channel between the source and drain, allowing the current to pass. This is particular useful in high efficiency synchronous rectification applications, where the FDB045AN08A0 begins saturation state in order to switch off the MOSFET by reducing the voltage across the gate, as the gate maintains a resistive relationship with the source of the MOSFET.

Conclusion

The FDB045AN08A0 is a single N-Channel MOSFET, specifically designed for use in high efficiency synchronous rectification in isolated DC/DC converter designs, as both a high and low side switch. It is provided with a gate drive that is designed for "low" logic level operation, and is capable of handling up to 40V. With an impressive on resistance of 45 mΩ (max), the FDB045AN08A0 is suitable for a wide range of applications such as power adapters, LED drivers, AC/DC converters, flyback converters, switched mode power supplies, battery powered applications and in automotive applications.

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