FDB0690N1507L Allicdata Electronics
Allicdata Part #:

FDB0690N1507L-ND

Manufacturer Part#:

FDB0690N1507L

Price: $ 2.58
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: 150V TO263 7L JEDEC GREEN EMC
More Detail: N-Channel 150V 3.8A (Tc) 250W (Tc) Surface Mount D...
DataSheet: FDB0690N1507L datasheetFDB0690N1507L Datasheet/PDF
Quantity: 1000
800 +: $ 2.31619
Stock 1000Can Ship Immediately
$ 2.58
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Supplier Device Package: D²PAK (TO-263)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 250W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 8775pF @ 75V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 6.9 mOhm @ 17A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The FDB0690N1507L is an advanced integrated circuit primarily used as an electronic switch in a variety of applications. It is a Field Effect Transistor (FET), commonly known as a MOSFET (Metal Oxide Semiconductor Field Effect Transistor). This type of transistor was invented in 1962, as an alternative to the bipolar junction transistor (BJT), to increase efficiency and reduce power consumption. It is popular in today’s electronics, because it can successfully switch large voltages, current levels and power, while operating at lower temperatures compared to the BJT.The FDB0690N1507L has a drain and a gate, which are connected through a metal oxide semiconductor layer. The device has a maximum drain-source voltage of 150V, a maximum gate-source voltage of 20V, and a maximum continuous drain current of 15A. These specifications make the device suitable for use in a wide range of applications.Applications for the FDB0690N1507L include motor, solenoid and relay control, as well as power management in electronic power supplies and computer systems. It is also used to switch signals such as audio, video and optical interconnects, as well as in communications and process control systems.The working principle of a FET is based on the electric charge between the semiconductor layers. The gate of the device is negatively charged when a voltage is applied, which creates an electrical field between the gate and the semiconductor layer. This field changes the resistance of the channel, which allows for current to flow between the source and the drain of the device. This action can be compared to the way a valve works, with the current flowing through the channel just like water flows through a pipe controlled by a valve.The FDB0690N1507L has a maximum junction temperature of 175°C, which is lower than the junction temperatures of other FETs. This is because the metal oxide semiconductor layer acts as an insulator, so less power is dissipated in the device. The device also has self-heating characteristics and a unique thermal protection feature to prevent it from overheating and damaging the semiconductor element.Overall, the FDB0690N1507L is an excellent device for switching high voltage and current levels while operating at low temperatures. Its wide operating range and robust thermal protection capabilities make it suitable for a variety of high power applications. It is also designed to consume less power than other similar devices, making it ideal for power management and energy saving applications.

The specific data is subject to PDF, and the above content is for reference

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