FDB050AN06A0 Allicdata Electronics
Allicdata Part #:

FDB050AN06A0TR-ND

Manufacturer Part#:

FDB050AN06A0

Price: $ 1.33
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 60V 80A TO-263AB
More Detail: N-Channel 60V 18A (Ta), 80A (Tc) 245W (Tc) Surface...
DataSheet: FDB050AN06A0 datasheetFDB050AN06A0 Datasheet/PDF
Quantity: 1000
1 +: $ 1.33000
10 +: $ 1.29010
100 +: $ 1.26350
1000 +: $ 1.23690
10000 +: $ 1.19700
Stock 1000Can Ship Immediately
$ 1.33
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D²PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 245W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3900pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
Series: PowerTrench®
Rds On (Max) @ Id, Vgs: 5 mOhm @ 80A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 80A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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FDB050AN06A0 is a type of field effect transistor (FET) also known as an insulated gate field effect transistor (IGFET), and is a type of MOSFET (metal oxide semiconductor field-effect transistor). It is a single N-channel FET with an ultra-low drain-source crossover current.

The FDB050AN06A0 is used for various applications. It functions as a switch for controlling and switching of electrical voltage and current. It is used for the purposes of regulating power, signal routing, and signal modulation, especially in circuits that are exposed to high frequency and voltage. Additionally, FDB050AN06A0 is typically utilized as electrostatic discharge (ESD) protection devices, switching devices, and as an amplifier. Because they are relatively small and operate at low voltages, they are also used in consumer electronic products such as remote keyless entry systems and digital cameras. FDB050AN06A0 is also used in automotive systems and industrial applications.

In terms of the working principle, the FDB050AN06A0 operates with a certain threshold voltage. Once the voltage reaches the threshold voltage, the FET turns on, allowing a current to flow from the source to the drain. This current flow is further regulated by the gate-source voltage, which can then be used to modulate and reduce the voltage. A drain-source voltage is also applied, which helps to regulate the threshold voltage of the FET so that it channels the correct amount of voltage and current at the same time.

The FDB050AN06A0 offers several advantages compared to other transistor types. It provides superior insulation characteristics, and is also very reliable. It is also able to dissipate heat quickly and efficiently, which is crucial for high-power systems since excessive heat can cause components to overheat and eventually fail. Additionally, it offers very good noise immunity and is able to operate at high frequencies, making it a good choice for high-speed systems.

Overall, FDB050AN06A0 transistors are a great choice for high-power, low-voltage systems and applications. Due to their small size, high power ratings, and superior insulation characteristics, it is a cost-effective and reliable solution for a variety of applications. From automotive systems to consumer electronics, FDB050AN06A0 transistors are a great choice for many different types of circuits and applications.

The specific data is subject to PDF, and the above content is for reference

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