
Allicdata Part #: | FDB050AN06A0TR-ND |
Manufacturer Part#: |
FDB050AN06A0 |
Price: | $ 1.33 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 80A TO-263AB |
More Detail: | N-Channel 60V 18A (Ta), 80A (Tc) 245W (Tc) Surface... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | $ 1.33000 |
10 +: | $ 1.29010 |
100 +: | $ 1.26350 |
1000 +: | $ 1.23690 |
10000 +: | $ 1.19700 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D²PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 245W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3900pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 80nC @ 10V |
Series: | PowerTrench® |
Rds On (Max) @ Id, Vgs: | 5 mOhm @ 80A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 18A (Ta), 80A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
.FDB050AN06A0 is a type of field effect transistor (FET) also known as an insulated gate field effect transistor (IGFET), and is a type of MOSFET (metal oxide semiconductor field-effect transistor). It is a single N-channel FET with an ultra-low drain-source crossover current.
The FDB050AN06A0 is used for various applications. It functions as a switch for controlling and switching of electrical voltage and current. It is used for the purposes of regulating power, signal routing, and signal modulation, especially in circuits that are exposed to high frequency and voltage. Additionally, FDB050AN06A0 is typically utilized as electrostatic discharge (ESD) protection devices, switching devices, and as an amplifier. Because they are relatively small and operate at low voltages, they are also used in consumer electronic products such as remote keyless entry systems and digital cameras. FDB050AN06A0 is also used in automotive systems and industrial applications.
In terms of the working principle, the FDB050AN06A0 operates with a certain threshold voltage. Once the voltage reaches the threshold voltage, the FET turns on, allowing a current to flow from the source to the drain. This current flow is further regulated by the gate-source voltage, which can then be used to modulate and reduce the voltage. A drain-source voltage is also applied, which helps to regulate the threshold voltage of the FET so that it channels the correct amount of voltage and current at the same time.
The FDB050AN06A0 offers several advantages compared to other transistor types. It provides superior insulation characteristics, and is also very reliable. It is also able to dissipate heat quickly and efficiently, which is crucial for high-power systems since excessive heat can cause components to overheat and eventually fail. Additionally, it offers very good noise immunity and is able to operate at high frequencies, making it a good choice for high-speed systems.
Overall, FDB050AN06A0 transistors are a great choice for high-power, low-voltage systems and applications. Due to their small size, high power ratings, and superior insulation characteristics, it is a cost-effective and reliable solution for a variety of applications. From automotive systems to consumer electronics, FDB050AN06A0 transistors are a great choice for many different types of circuits and applications.
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