
Allicdata Part #: | FDB088N08_F141-ND |
Manufacturer Part#: |
FDB088N08_F141 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CHANNEL 75V 120A D2PAK |
More Detail: | N-Channel 75V 120A (Tc) 160W (Tc) Surface Mount D²... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D²PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 160W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 6595pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 118nC @ 10V |
Series: | PowerTrench® |
Rds On (Max) @ Id, Vgs: | 8.8 mOhm @ 75A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 120A (Tc) |
Drain to Source Voltage (Vdss): | 75V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The FDB088N08_F141 is a power Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) that keeps a unique balance of conducting power and insulating protection performances. It is a cutting-edge field-effect semiconductor device with excellent switching performance and fast operation, suitable for high-frequency high-power devices.
The application field of FDB088N08_F141 is mainly in mobile communications, charging supplies, electric power converters, power supply switching, wind power systems, server power systems, electric vehicle drives, medical industry, and other fields.
FDB088N08_F141 mainly works in a switching circuit. A MOSFET acts like an electronic switch in a circuit. It’s normally in its “ON” state, which lets electricity go through its source and drain terminals; when triggered to its “OFF” state, the source and drain path is insulated, just like a closed switch in a regular mechanical switch circuit. This “OFF” state is achieved by applying a negative voltage on the gate terminal, which repels the majority carriers and shuts down the other two terminals. It can also be triggered to its “ON” state by applying a positive voltage on the gate terminal, allowing that voltage to attract the majority electric carriers at the source terminal and allowing the flow of electricity from the source to the drain.
The FDB088N08_F141 features superior insulation performance compared to ordinary MOSFETs. It also features a higher rated breakdown voltage, allowing it to handle larger currents than standard MOSFETs. In terms of power losses, the FDB088N08_F141 performs better than ordinary semiconductor MOSFETs, with lower on-resistance, lower turn-on and turn-off costs, and lower static input capacitance.
The FDB088N08_F141 also provides improved high-speed switching performance. It can operate at a frequency of up to 5GHz and is capable of switching up to 15kV/μs. This includes a slew rate of up to 150A/μs, which makes it suitable for applications that require fast switching times.
The FDB088N08_F141 is robust, reliable, and versatile. Due to its high thermal resistance and fast-switching performance, the FDB088N08_F141 is able to provide superior performance and efficiency in a variety of applications. It is also highly scalable and customizable, allowing for the integration of additional features such as on-board diagnostics and self-protection functions.
The specific data is subject to PDF, and the above content is for reference
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