FDB082N15A Discrete Semiconductor Products

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FDB082N15A is a vertical DMOS Field Effect Transistor. It is manufactured by STMicroelectronics. It is a single N-channel Enhancement-Mode Power MOSFET which combines the best feature of both N-channel and enhancing-mode power MOSFET. It is characterized in terms of its VDSS (Drain-Source Voltage) ratings, maximum RDS(on) (Drain-Source On Resistance) and maximum current ratings. FDB082N15A is an excellent choice for low-voltage, high-efficiency, and high-current switch applications. FDB082N15A is capable of operating in the voltage range from 6V up to 55V.

The FDB082N15A exhibits high drain-source breakdown voltage VDSS of 57V, low RDS(on) of 0.8-2.2 Ω and maximum current of 62A. The operating temperature of FDB082N15A is –55°C up to +175°C. It is designed with a vertical structure that delivers very low gate drive losses and low power consumption. It also has applications in a wide range of power handling applications including automotive and industrial equipment.

The working principle of FDB082N15A is primarily based on the principles of field-effect transistors. The device consists of three terminals: gate, source, and drain. When the gate terminal is made negative relative to the source terminal, the channel of the gate is inverted and the channel between the source and drain terminals is formed. The channel reduction leads to the increase in drain to source resistance and this is known as the "on-state" of the device. A drain current can be obtained by applying a positive gate to source voltage (VG - VGS) to the gate terminal with respect to the source terminal. The device is then in the "on-state" condition and the drain current increases until it reaches the peak current.

FDB082N15A can be used in a wide range of switching applications, such as DC-DC converters, UPS, battery backup systems, and charging systems. It is also used in a number of high-voltage, high-current applications including automotive and industrial equipment. FDB082N15A devices are cost-effective and have desirable switching characteristics that make them suitable for a range of power handling applications.

To sum up, FDB082N15A is a power MOSFET device that combines the best features of both N-channel and enhancing-mode power MOSFETs. It is characterized in terms of its VDSS (Drain-Source Voltage) ratings, maximum RDS(on) (Drain-Source On Resistance) and maximum current ratings. FDB082N15A is an efficient and low-cost solution for high-voltage, high-current switching applications. It has a wide range of applications in automotive and industrial equipment and is suitable for a variety of power handling applications.

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