FDB035N10A Discrete Semiconductor Products

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FDB035N10A is a kind of single Field Effect Transistor (FET) that uses an insulated gate to control the conduction between the drain and source terminals. It belongs to the family of power MOSFETs, which is designed to operate in a wide variety of applications, such as power management, distributed power system design and switching regulators.

This FET is available in a variety of packages, such as TO-220, TO-263, and D2PAK which are suitable for different high-power applications. It features low on-resistance, which allows it to switch applications with higher efficiency. Due to its wide-band gap structure, this FET has better temperature stability and can operate with high PSRR. Moreover, it is highly effective for low-frequency voltage control in switching regulators.

This FET is designed to be well-suitable for battery-operated products. For instance, this device can work efficiently as a switch in circuits used in mobile/IoT products and laptops. Moreover, it can also be used in various switching regulators and SEPIC converters. Additionally, it can be used as a synchronous rectifier in efficiency-oriented AC-DC power converters. Furthermore, this FET is perfect for automotive applications such as LED lighting, buck converters, AUX power rails and so on.

In terms of its working principle, this FET works as a voltage-controlled device. This FET has two basic working stages, namely, the linear and saturated region. This FET operates over two stages because it has three terminals, gate, drain, and source. In the linear region, the voltage applied to the gate terminal controls the current flowing between the drain and source terminals. Moreover, when the device enters the saturation region, the current is virtually unregulated and the voltage dropped across the drain and source terminals will remain virtually fixed.

FDB035N10A is a versatile single Field Effect Transistor which is suitable for a wide range of applications. It has a low on-resistance, wide-band gap structure and temperature stability which makes it suitable for a variety of high-power applications, including mobile/IoT products and automotive applications. Furthermore, its working principle is based on voltage-controlled device, with the current flowing between the drain and source terminals regulated by the voltage applied to the gate terminal.

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