FDB070AN06A0 Allicdata Electronics

FDB070AN06A0 Discrete Semiconductor Products

Allicdata Part #:

FDB070AN06A0TR-ND

Manufacturer Part#:

FDB070AN06A0

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 60V 80A TO-263AB
More Detail: N-Channel 60V 15A (Ta), 80A (Tc) 175W (Tc) Surface...
DataSheet: FDB070AN06A0 datasheetFDB070AN06A0 Datasheet/PDF
Quantity: 800
Stock 800Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D²PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 175W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V
Series: PowerTrench®
Rds On (Max) @ Id, Vgs: 7 mOhm @ 80A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 80A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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FDB070AN06A0, or field-effect transistor (FET) is a type of transistor used in electronic circuit designs to switch and amplify electronic signals. It works by controlling the amount of current passing through a semiconductor material. The FET has three terminals known as the source, drain, and gate. The current flows through the channel between the source and drain, and the gate voltage determines the level of current flow.

FDB070AN06A0 is a single N-channel enhancement mode MOSFET which belongs to the Vishay Siliconix family. Typically, FETs are much cheaper than bipolar transistors and usually offer higher input impedance than bipolar transistors. FDB070AN06A0 is mainly used for high speed switching applications, as it has excellent switching and threshold characteristics and can provide very low turn-on losses.

The internal structure of FDB070AN06A0 is composed of a source, a drain, and the gate. When a voltage is applied between the source and drain terminals, the current passes through the channel formed between the source and the drain. The gate is then responsible for controlling the current flowing through the channel by controlling the voltage between the source and the drain. This is done by applying a voltage to the gate, which then affects the electric field created between the source and the drain.

In order to fully understand FDB070AN06A0, its working principle must be understood. It works by applying a voltage to the gate terminal, which in turn creates an electric field between the source and the drain. This electric field then affects the behavior of the charges that form the channel between the source and the drain. This charge formation depends upon the gate voltage, and when this voltage is increased, the field is made more intense and the channels are compressed. This compression causes the current flowing through the channel to be reduced.

The voltage applied to the gate terminal of FDB070AN06A0 is usually higher than the source-drain voltage, and this creates a PN junction barrier between the source and the drain. This PN junction barrier is what prevents the current flow through the FET from dropping to zero when the gate voltage is applied. This type of FET is also known as an enhancement-mode FET, as the current can only be increased by increasing the gate voltage.

FDB070AN06A0 is mainly used in high-speed switching applications as it has excellent switching characteristics and low turn-on losses. It is capable of exhibiting very low input capacitance and high output current, making it a suitable choice for high-speed switching operations. Some of the applications in which FDB070AN06A0 is used include power inverters, power converters, power supplies, switching regulators, and DC-to-DC converters. It is also used in high-frequency radio-frequency transmitters and receivers.

In conclusion, FDB070AN06A0 is a single N-channel enhancement mode MOSFET used for high-speed switching applications. It works by controlling the voltage between the source and the drain, which in turn affects the electric field created between the source and the drain. When the gate voltage is increased, it compresses the channels formed between the source and the drain, reducing the current passing through them. FDB070AN06A0 is used in a variety of high-speed switching applications, from power inverters to radio-frequency transmitters and receivers.

The specific data is subject to PDF, and the above content is for reference

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