FDB0170N607L

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The FDB0170N607L is an N-channel, depletion-mode Logic Field Effect Transistor (FET) from Vishay which is a FET with a very low voltage drop between source and drain. It is typically used as a switch, instead of a relay, in many applications. With a total gate-source voltage (VGS) of 4V and a drain-source voltage (VDS) of 17V, it is able to handle large power and offers enhanced EMI and RFI filtering capabilities.

FDB0170N607L operates on the principle of Field Effect Transistor (FET). FETs are transistors that use an electric field to control the flow of current. The electric field is created when a voltage is applied to the FET\'s gate terminal. Depending on the voltage applied to the gate and the voltage supplied to the drain and source, FETs may be either enhancement-mode or depletion-mode, with the FDB0170N607L being classified as a depletion-mode FET.

Although FETs are sometimes referred to as solid-state switches, they actually react more like variable resistors than switches. This is because, unlike a circuit breaker, FETs are voltage-controlled devices. Depending on the voltage supplied to the gate, the FET will adjust its resistance to the current passing through it. In the case of the FDB0170N607L, the minimum resistance is 0.2 ohms, offering much lower losses than switches or traditional relays.

The FDB0170N607L can be used in a variety of applications, including power supplies, electromechanical relays, lighting circuits, UPS systems, and audio amplifiers. It is suited for use in computer and telecom applications, as well as other systems that require low losses and high efficiency. Additionally, the FDB0170N607L is well-suited for high-frequency power switch applications such as solar cell inverters, motor drives, and motor control devices, thanks to its Hi-Rel Ratings and low on-resistance.

The FDB0170N607L is easy to use and requires minimal external components. The FETs internal gate structure is designed to accommodate fast switching speeds and its low input capacitance ensures minimal current consumption. Furthermore, its low thermal resistance ensures the device can dissipate a large amount of heat, making it an ideal choice for applications in compact, high-powered designs.

In conclusion, the FDB0170N607L is an N-channel Logic FET with excellent switching performance, low input capacitance, and high power dissipation capabilities. Its depletion-mode characteristic makes it particularly well-suited for use in high-frequency applications, and its low on-resistance ensures minimal power losses. The FET is also easy to use, requiring only minimal external components, making it suitable for a wide range of demanding applications.

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