FDB016N04AL7

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The FDB016N04AL7 is a N-channel monolithic field-effect transistor (FET) which, as part of its excellent characteristics, must be taken into account, such as its low gate charge, excellent thermal characteristics, low on-state resistance and low switching losses, which make it a very attractive solution for applications that require a power switch in applications such as industrial, automotive and telecom. Below, we will review the application fields in which this FET can be used and its operating principle.

Application fields

FDB016N04AL7 is a very popular transistor in the industrial market, in both automotive and telecom sectors. Because of its excellent on-state resistance and low switching losses, it is perfect when an efficient, low-power power switch is desired. In addition, this transistor demonstrates high resistance to surges, as well as low thermal dissipation and good break-over characteristics. This makes it suitable for any application with high energy demands and fast switching times.On the other hand, its thermal characteristics, excellent for what is intended for, allow it to function correctly even if it is required to work in a thermally constrained environment, such as in the industrial sector, or in any other environment with a temperature profile that needs to be controlled.

Also, it works efficiently in any circuit without being affected by interference or noise, being useful for applications in which it is necessary to switch signals accurately, precisely and in a reliable way.

Finally, its gate charge is among its best characteristics, which gives it an advantage in applications that limit the current flow, such as power distribution and motor control.

Working principle

FDB016N04AL7 is an N-channel power MOSFET unit. It operates in a similar way to other field effect transistors, but with better performance. We can identify 3 terminals in the FET, a drain (D), a gate (G) and a source (S) between which a given electric field is generated. When a voltage is applied at the Gate terminal, the electrons found in the channel are attracted or repelled from it, thus allowing or preventing the flow of charge between the source and the drain.

An electric field is created between the gate and the source terminals, allowing the electrons to flow between them, which makes the current flow through the channel to the drain. The intensity of this electric field is determined by the voltage applied at the gate terminal.

The transistors of this type are widely used in circuits with amplification and modulation of signals, since these transistors allow the voltage to be controlled precisely, providing an exact amplifier gain.

In conclusion, FDB016N04AL7 is a FET with excellent characteristics and capabilities, which makes it suitable for a wide range of applications, such as industrial, automotive and telecom, where its excellent thermal characteristics, low on-state resistance and low switching losses are of particular relevance.

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