FDB047N10 Allicdata Electronics

FDB047N10 Discrete Semiconductor Products

Allicdata Part #:

FDB047N10TR-ND

Manufacturer Part#:

FDB047N10

Price: $ 1.79
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 100V 120A D2PAK
More Detail: N-Channel 100V 120A (Tc) 375W (Tc) Surface Mount D...
DataSheet: FDB047N10 datasheetFDB047N10 Datasheet/PDF
Quantity: 3200
1 +: $ 1.79000
10 +: $ 1.73630
100 +: $ 1.70050
1000 +: $ 1.66470
10000 +: $ 1.61100
Stock 3200Can Ship Immediately
$ 1.79
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D²PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 375W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 15265pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 210nC @ 10V
Series: PowerTrench®
Rds On (Max) @ Id, Vgs: 4.7 mOhm @ 75A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The FDB047N10 is a high performance, shielded Gate, low Loss N-channel Enhancement mode Field Effect Transistor (FET) with a maximum drain current of 15 A. It is commonly used in various motor applications, DC-DC converters and power supplies and other automotive electronics. This FET is quite popular because of its superior switching characteristics, low power losses and good thermal performance, making it suitable for a variety of electronic components.

The FDB047N10 is a three-terminal device with a gate, a source and a drain. The gate terminal is connected to the thin gate oxide and allows the external bias voltage to control the input current of the FET. The source terminal is connected to the body of the FET, everything else being equal and independent of the gate voltage, while the drain terminal carries the output current. The gate voltage can vary up to 12 V with a maximum continuous drain current up to 15 A.

The FDB047N10 uses a special, self-aligned shielded metal-oxide semiconductor (MOS) structure. This structure allows for a high operating temperature of 175ºC and superior switching characteristics. The relatively low input capacitance and fast body-diode recovery time provide a better driving capability and less power loss. Additionally, the FDB047N10 has a low on-resistance resulting in better conduction losses and reduced heat generation.

The working principle of the FDB047N10 is quite simple. As the gate voltage is increased, the conducting channel is opened and the current flow from drain to source is enhanced, increasing gate current as well. This results in higher drain current, as well as power dissipation across the FET. The drain current is proportional to the gate voltage, making it easy to control the ratio of on-time to off-time. With the FDB047N10’s drain current capability and fast switching speed, it is a great choice for use in high-frequency circuits such as voltage-mode control power elements.

The FDB047N10 is a commonly used MOSFET in both commercial and industrial applications, as it is capable of high power dissipation and good switch performance. It is ideal for use in DC-DC converters, power supplies, and other motor control applications, such as electric vehicle inverters, where high speed and high power is required. As it can be operated at a maximum temperature of 175ºC, The FDB047N10 is an ideal choice for automotive applications.

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The specific data is subject to PDF, and the above content is for reference

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